| In this paper,the research on ultra wide band gap semiconductor BN devices is carried out.Due to its large band gap,high electron mobility,high temperature stability and large breakdown field strength,ultra wide band gap semiconductor materials are not only ideal materials for preparing high temperature and high power power power electronic devices,but also ideal materials for preparing deep UV photodetectors.In this paper,the working principle,simulation and optimization of device structure,characterization of material characteristics and device simulation of MSM ultraviolet detector are studied,which are mainly divided into the following aspects:?1?The structure and performance of the detector are optimized by Atlas simulation tool.The simulation contents include:spectral response characteristics,doping concentration,electrode unit,illumination ratio,asymmetric electrode finger width,different electrode work functions,electrode protection.The spectral response of the display device is the highest for the incident light with a wavelength of about 200nm.The best device model is that the doping concentration of the film is 1014cm-3,taking 20?m as an electrode unit,the illumination area accounts for 90%.Pt?5.65ev?with the highest work function is selected as the electrode metal material,and the field limiting ring structure is added to improve the safety of the device.?2?The principle of XRD,ir-vis-uv transmission,absorption and reflection spectrum and thin film analyzer were analyzed,and the existing BN materials were characterized.XRD results show that the sample material belongs to the cubic phase structure of BN material.The test results of the transmission absorption spectrum show that the sample has the strongest absorption for the incident light with a wavelength of about 200 nm.According to the fitting formula of semiconductor band gap width,the optical band gap of the sample is 5.838eV.The band edge optical absorption coefficient of the sample calculated by the relationship between absorption rate and thickness is as high as 1.76×105 cm-1.?3?Using the results of atlas simulation optimization,the device simulation of the existing materials is carried out,and the electrical behavior changes caused by the BN film thickness difference are compared.The simulation results show that the saturation dark current of the device is 1.6×10-19A,the saturation light current of the device is 1.2×10-8A,and the corresponding light dark current ratio of the device is 7.5×1010. |
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