Research And Application On Temperature Sensitivity Of Electrical Parameters Of Si Power Semiconductor Devices

With the rapid development of industrial society and information age,electronic science based on semiconductor devices supports the renewal and operation of modern science and technology.Among them,the Si-type power semiconductor device has become the backbone of the semiconductor industry with its unique technical advantages and productivity advantages.It has been widely used in aerospace,military science and engineering,power grid transportation,electric locomotive,automatic control,logistics and energy storage,etc.However,power semiconductor devices bear huge switching losses and load large power in the process of operation,which easily causes a series of reliability risks caused by temperature rise.Temperature is an important index to measure the reliability of devices.Classical theoretical models such as Arenis model have pointed out that the life of devices decreases by half and the corresponding failure risk increases exponentially with the increase of temperature by10?.Therefore,in order to ensure that power devices work in a safe range,effective monitoring of their temperature is a good means to help engineers grasp the status of devices in real time and avoid economic losses caused by thermal damage.Compared with the physical contact thermometry and optical thermometry,the electrical thermometry does not destroy the original package of the device and has strong embeddedness,which can match the normal working circuit.Compared with the analog simulation thermometry,the results obtained by the electrical thermometry come from the actual measurement and have obvious advantages in the heterogeneity characterization of the device.Electrical thermometry,which takes specific electrical parameters as temperature sensitive parameters and deduces knot temperature by pre-constructing calibration curve,has become a hot research topic in the world in recent years.However,there are many kinds of temperature sensitive parameters reported in various literatures.There are few uniform reports on the temperature characteristics of parameters,which seriously hinders the development and application of electrical thermometry.In this paper,the temperature characteristics of electrical parameters of semiconductor devices are studied,and the applicability conditions and selection rules of temperature-sensitive parameters are given.The consistency of dynamic parameters,static parameters,steady-state parameters and transient parameters is verified,which is helpful to popularize the principle of non-difference of temperature-sensitive parameters and is verified by classical power semiconductor devices such as power MOS,IGBT and diode.The specific research results are as follows:Firstly,the origin of temperature characteristics of electrical parameters is explored,and it is proved that the temperature characteristics of temperature-sensitive parameters which can be applied at present all come from intrinsic carrier concentration9)₄)and carrier mobility₄).The temperature characteristics of temperature-sensitive parameters are consistent.Secondly,the temperature-sensitive characteristics of dynamic and static parameters such as threshold voltage V_th,delay time T and channel resistance Ron are discussed,and the applicable selection rules of temperature-sensitive parameters are proposed,which are strictly proved by typical temperature-sensitive parameter groups.Thirdly,the phenomenon of"blind zone"in the temperature calibration curve is studied,and the controlling mechanism of temperature characteristics of temperature sensitive parameters and the reasons for the change of temperature characteristics are explained.The mutually validated conclusions are drawn from the measured results of temperature calibration curves of power MOS and IGBT devices.Fourthly,on the basis of the above work,the consistency and difference of temperature sensitive parameters of Si type power semiconductor devices are systematically sorted out,the applicability conditions and corresponding selection rules of temperature sensitive parameters are obtained,and many phenomena in electrical temperature measurement are explained perfectly in theory.