The Fabrication And Analysis Of Characteristics Of A 852nm Semiconductor Lasers

With the development of optoelectronic technology,semiconductor lasers are gradually used in communications,medical,daily necessities and other fields.Semiconductor lasers in different areas,its characteristics are not the same.While the semiconductor lasers used in space systems have higher requirements for spectral quality and output stability.So it is very important to prepare a semiconductor laser with good spectral quality and high output stability.Based on the research on the related content of 852 nm semiconductor lasers,an improved semiconductor preparation process was used to fabricate a 852 nm F-P(Fabry-Pero)type semiconductor laser with good performance and tested and analyzed performance.The main research work is as follows:1.In order to optimize the structural parameters of semiconductor lasers,the effect of cavity length and ridge width on the characteristics of semiconductor lasers under the same process conditions was studied.The results show that under the same cavity length,The spectral spectrum of the device with narrow ridge width is better,while in the case of the same ridge width,the P-I curve of the device with longer cavity length is more stable.The optimum ridge width and cavity length of the semiconductor laser were 5 ?m and 1000 ?m,respectively.2.In order to solve the problems in the traditional preparation of semiconductor lasers with the low quality of finished products,the physical and technological methods of semiconductor technology are studied,and the feasibility is verified by experiments.Secondly,the annealing process parameters and laser cavity are optimized.Surface coating process parameters design;Finally,the preparation of the 852 nm semiconductor lasers.3.Conduct test and analysis of 852 nm semiconductor lasers.First,the device was tested under normal temperature conditions: the spectral line width was less than 1nm,and under the drive current of 150 mA,the output optical power was 104 mW,the Power conversion efficiency was 37.5%,the lasing wavelength was 846.5nm,the spectral line width is 0.625 nm.On the basis of this,the internal quantum efficiency is 66.94% by the variable length design test.4.The temperature characteristics of the 852 nm semiconductor laser are analyzed.Firstly,the relationship between the threshold current and the output power and temperature is tested and studied by adjusting the temperature of the semiconductor laser with the temperature control device under the cw condition.The results show that the threshold current and output power are inversely proportional to the temperature,the rate of change is 0.447 mA / K and 0.63 mW / K,the characteristic temperature is 142.5K.Under the pulse condition,the relationship between the power loss and the lasing wavelength is studied,and the fitting curve is drawn.Finally,the thermal resistance of the semiconductor laser is 77.7K/W.