Design Of CMOS Reconfigurable Passive Down-conversion Mixer And Reconfigurable Low Pass Filter For LTE MTC Receiver

With the rapid development of the Internet and mobile Internet,the popularity of the Internet of Things is getting higher and higher.The Internet of Things technology based on LTE technology adopts an internal deployment method,which does not need to allocate spectrum separately,can provide wider coverage,supports high-speed mobile reliability and independent positioning,and is dedicated to the global connection of IoT devices and coexisting efficiently with current services.As the key module of RF receiver,the design technology of mixer is always the research focus of RF integrated circuits.The filter is located behind the mixer in the receiver system,the filter is the process of linear time invariant processing according to a given indicator.One of the main contents of this thesis is to design a broadband reconfigurable mixer for LTE-MTC zero-IF receiver based on TSMC65 LP CMOS technology.The mixer consists of three parts: controllable transconductance stage,switching stage and variable transimpedance amplifier.The mixer achieves four flexible gains(5/11/19/26dB)and three flexible band width(5/7.5/10MHz),and the linearity and noise figure are also suitable for LTE-MTC standards.At the minimum gain,IIP3 is about 13.2dBm.At the maximum gain,its noise coefficient NF is 7.8dB.At 1.2V supply voltage,two low-end gains consume 3.4mA current,and two high-end gains consume 6.3mA current with an area of 0.840μm*0.68μm.Another main research content of this thesis is to design a broadband reconfigurable filter for LTE-MTC zero-IF receiver based on TSMC65 LP CMOS technology.By using a reconfigurable OTA array and a variable passive RC network,the designed filter is reconfigurable to handle signals of the LTE-MTC communication standard.The simulation results after the circuit all meet the design specifications.The filter achieves(0.7/2.5/5/7.5/10 MHz)five-band IF bandwidth,with passband gain 0 dB,ripple fluctuation less than 0.5 dB,power consumption 3.8 mW,and an area of 0.465μm *0.825μm.