Font Size: a A A

Study Of Ceramic Interposer Key Technology

Posted on:2020-08-17Degree:MasterType:Thesis
Country:ChinaCandidate:Y T SunFull Text:PDF
GTID:2428330620458885Subject:Electronic and communication engineering
Abstract/Summary:PDF Full Text Request
3D Packaging Integrated Circuit is based on the interposer technology to achieve signal interconnection between the upper and lower surfaces of the vertical vias.The paper drew on the traditional design concept of silicon interposer,and proposed a ceramic interposer design based on through ceramic via(TCV)technology.Besides,the paper exploited a new ceramic interposer preparation process,prepared the ceramic interposer sample with AlN as an example and tested around its related properties.According to the excellent properties of ceramic materials(in the case of AlN),the AlN ceramic interposer has a better electrical insulation and higher electrical isolation compared with the silicon interposer.Compared with the glass interposer,the coefficient of thermal expansion(CTE)between the ceramic interposer and the silicon material is closer,and the substrate warpage is less to occur.The drilling process is more mature than the TGV tungsten wire perforation technology.Thus,the followings are the contents of ceramic interposer technology studied in this paper.Firstly,the electrical performance of the AlN ceramic interposer was simulated.By establishing the equivalent mathematical model of TCV crosstalk in HFSS,the parameters of parasitic resistance,capacitance and inductance in the equivalent model are extracted,and the equivalent models of two-port and four-port TCV crosstalk are established.From the various structural parameters of the ceramic interposer,the signal transmission and coupling crosstalk in the ceramic interposer are simulated and found that reducing the thickness of the lining,the diameter of via and increasing the distance between TCVs can reduce the signal transmission loss.Reducing the via height and increasing the distance can reduce the coupling crosstalk between adjacent TCVs.However,the latter mainly reduces crosstalk in the middle and high frequency bands.Based on the equivalent parasitic parameters of TCV,the equivalent mathematical model is abstracted into a π-type circuit.The compare fittings between simulation and calculate are high and the values are similar.Finally,the simulation results of TCV and TSV models with the same structural parameters,the TSV insertion loss at different height,diameter and distance is 10,11 16 times at 10 GHz than the TCV structure.Meanwhile,in order to develop the optimized ceramic interposer,the polyimide vacuum filling method was firstly used to overcome the defects of irregular pores inside the ceramic substrate.Two kinds of ceramic flow based on the electroplating copper filling process and the conductive silver paste filling process were developed.The AlN ceramic interposer samples were successfully developed and tested around the main electrical properties.The results show that when the curing temperature is 200°C and the mass fraction of silver powder is in 80%-90%,the filling effect is better.Moreover,the via has stable performance under high temperature processing or 100 V.The TCV resistance is about 0.04Ω,and the insertion loss and return loss of the AlN ceramic interposer are-0.2dB,-130dB@10GHz respectively.Compared with the silicon and glass interposer,the ceramic interposer has better performance and significant practical value.
Keywords/Search Tags:3D Packaging, AlN Ceramic interposer, Ceramic substrate pore filling, Via filling interconnection, Transmission characteristics
PDF Full Text Request
Related items