Electrochemical Characteristics Of Silicon Carbide And Simulation Of Surface Mechanical Scratching

With the rapid development of domestic IC industry,the requirement of surface quality of semiconductor chip itself is getting higher and higher.Now the mainstream fabs of silicon?Si?and silicon carbide?SiC?pills are the traditional chemical mechanical polishing?CMP?process method,this subject adopts the electrochemical mechanical polishing?ECMP?relative to the CMP,has faster material removal rate,smaller processing load,smaller surface damage,can realize the efficient silicon carbide chip,the production of high yield production.In view of the electrochemical oxidation corrosion of SiC,the scanning voltampoule method?LSV?was tested in different solutions.The EIS was measured under different polarization potentials,and the law of liquid-connected polarization resistance decreasing with the increase of voltage was obtained.EIS experiments were conducted to explore the change rule of the film impedance in the electrochemical corrosion process.Finally,the electric field simulation was carried out on the uneven surface of silicon carbide to explore the phenomenon of "tip discharge" at the convex peak,and the oxidation rate of silicon carbide was different due to the different oxidation film products in different solutions.The nanometer indentation simulation experiment was carried out by using ABAQUS software in this paper to explore the transition process of the two materials from elastic-plastic to brittle failure under different pressure depths.The results show that the pressure depth and ultimate load of SiC's brittle failure are greater than SiO₂,and the best cutting depth that can remove SiO₂ without harming SiC is between 100 nm and 156 nm.To explore the influence of different head sizes and specimen sizes on the nano-indentation experiment of hard and brittle materials.The simulation experiment of mechanical engraving SiO₂ and SiC on abrasive particles was completed.The results showed that with the deepening of engraving depth,the cutting force,radial force and material removal amount increased in a certain range.With the increase of friction velocity,the cutting force and radial force increase continuously.The experiments of SiO₂ and SiC under different loads were completed,and the simulation of SiO₂ and SiC composite layers was carried out.The results showed that if a force of 5m N was applied to each abrasive particle,the surface of SiC could not be damaged without SiO₂ removal.