Research On Simulation Model Of Etching Process In Integrated Circuit Manufacturing

The control of the parameters such as profile shape,critical size and uniformity of etched graphics is still one of the important problems to be solved in plasma etching technology.the plasma etching model helps to reduce the development time of process engineers for different etching experiments.At the same time,it can greatly reduce the cost of R & D and improve product yield.This paper mainly focuses on the variation process of plasma etching profile of two-dimensional grooves,the energy distribution of incident particle flux,physicochemical reaction and probability,and the purpose of obtaining etching results that meet the needs by adjusting the parameters.This paper uses a hybrid plasma etching model,the main content and research results are as follows:1.Continuous cellular automata model is adopted to achieve the effect of dynamic display of etching process and results.The unit cell is defined to represent different materials,and the cells are non-linear and can have many states,which can change with the change of etching conditions.2.Ion will undergo chemical reaction and neutral particle will undergo physical reaction during plasma etching.plasma chemical monte carlo model is used to study the flux and incident ion energy angle distribution of incident ion and neutral particle,respectively.the simulation results serve as input conditions for mixed plasma etching model.The simulation results of incident ion energy angle distribution are fitted to normal distribution.3.Monte Carlo characteristic surface model is used to study all kinds of chemical reactions and their reaction probability on the surface of grooves in etching.by analyzing the reaction probability,various main parameters affecting the etching pattern are obtained,such as gas temperature,substrate temperature,doping concentration of substrate and so on.The new hybrid plasma etching model,which combines three models,is the innovation of this paper.4.The hybrid plasma etching model is simulated for different incident particle fluxes,incident ion energy angle distributions,and substrate temperatures.The simulation results show that the etching depth increases gradually with the increase of incident particle flux,but the etching rate decreases when the number of incident particles reaches a certain degree.