Study On The Stimulated Radiation Characteristics Of Pyramid Array Perovskite Based On SOI

Metal halide perovskites are a class of semiconductor materials that have received much attention in recent years.They have excellent photoelectric properties,such as superior light absorption,long photon carrier lifetime and carrier diffusion length.It has outstanding application in solar cell,high-resolution display,and light-emitting diode.On the other hand,the luminescence peak of this material has a very narrow half-width(at about 20 nm),the emitted light has high purity and good monochromaticity,which make it an excellent laser gain material.Based on the previous research results and combined with the mature silicon corrosion process,the perovskite quantum dot is used as the gain medium of the laser to design a perovskite laser with an array inverted pyramid structure.The paper designs three array sizes with a mask caliber of 2?m and period of 4?m,a mask caliber of 3?m and period of 4?m,a mask caliber of 3?m and period of 5?m.The electron beam exposure and anisotropic wet etching are performed on a single throwing surface 100 silicon wafer.By controlling the corrosion time,corrosion temperature,and corrosive solution concentration,the corrosion depths are 1.895?m,2.441?m,and 2.325?m,respectively.the regular array of inverted pyramid structure is successfully fabricated.Then,using the structure as a template,a 250 nm thick silver film is deposited as a dielectric layer by electron beam thermal evaporation,and the perovskite quantum dot synthesized by the hot injection method is coated on the silicon wafer by a low-speed spin coating method.And the tape is used to tear off the perovskite quantum dot outside the inverted pyramid structure,thus fabricating the array inverted pyramid perovskite microchip.Finally,by building the optical path of the stimulated radiation and testing the sample,the stimulated radiation characteristics of the array inverted pyramid perovskite microchip of different sizes can be researched.The half-width of the excitation light generated by this method is 7 nm,the quality factor Q is 75.1,and the excitation threshold is 37.6?J/cm~2.We can further optimize the structure size and spacing to design perovskite laser with lower threshold and a narrower half-width.