Research On The Preparation Of Graphene On Zinc Oxide Substrate By CVD Method

As a perfect two-dimensional plane material, graphene have become a hot point both on thetheory and preparation. It will be widely used in the next generation electronic devices becauseof it,s stable mechanical properties, good conduction performance and efficient transmission. Inorder to further explore on it,s preparation, graphene have been growth by the chemical vapordeposition method under the condition of different zinc oxide、temperature、carbon source flow.ZnO thin film was prepared on the silicon(111) substrate by RF magnetron sputteringmethod in this thesis.The basic parameters that can prepare good crystallization ZnO are asfollows: initial vacuum is4.010-4pa, working pressure is3.0±0.1pa, argon flow ratio is20sccm, oxygen flow ratio is15sccm, sputtering time is1hour, sputtering power is200w.Thenone part of ZnO thin film was prepared in room temperature、150℃、300℃、450℃and600℃respectively, and the other group were made in300℃,450℃and600℃which aretreated by vacuum annealing for1hour.Graphene is growthed by chemical vapor deposition method. In the first part of theexperiment, in order to choose suitable ZnO as substrate, ZnO has been choosed which is madein different emperature condition. In the other part of the experiment, graphene is prepared onthe ZnO substrate by CVD method. Through analyzing the influence of the following factorssuch as growth temperature、flow rate of benzene、growth time,and testing the characterization ofthe sample by Raman spectrometer、SEM、TEM，it is found that the best growth condition ofgraphene is ZnO as substrate that growth in600℃and reated by vacuum annealing for1hour,the growth temperature is800℃，carbon source is benzene, the reaction time is15min, argonflow is40sccm. The experimental results show that graphene has a continuous amorphousbatting structure.With a few layer at thin edge while multilayer at thick middle it has full of foldon the surface as the effect of ZnO template.