Controllable Growth Of GaN_xSb_1-x Nanowires And Their Photoelectrical Properties

Infrared detector holds a special significance and great potential applications such as night vision,navigation,astronomy,weather monitoring,pollution measurement,security and surveillance.In order to realize the next generation of infrared detectors with room temperature detection,high sensitivity and wide spectral range,many studies have focused on ?-? nanowires(NWs)with narrow band gap and high mobility.Theoretical design and controllable growth of high-quality ?-? NWs are key points for realizing the next generation of high-performance infrared detectors.With the highest hole mobility(1000 cm2 V-1 s-1)among ?-? semiconductors and a suitable bandgap(0.72eV),GaSb NWs have been regarded as the ideal channel material for achieving the high performance infrared detectors.It is worth nothing that by doping of 5%N in the GaSb will cause a large degree of their band gap.In this paper,we first conduct a detailed review of the recent advances in Sb-based ?-? NWs.Under the guidance of the review work,we use the simple and low-cost plasma chemical vapor deposition(PECVD)method to grow high-quality GaN.Sb1-X NWs and measure the photoelectrical performance.The main researches are as follows:We give an integrated review about the controllable growth and photoelectrical application of Sb-based ?-? NWs,including the fundamental properties,growth mechanism,typical synthetic methods and their applications in transistors and infrared detectors.Finally,the current challenges of Sb-based ?-? NWs growth and application are briefly discussed and some suggestions for future development are provided.Taking the review work as guidance,we synthesize GaNxSb1-x NWs by PECVD,The morphology,structure and composition of the obtained NWs are characterized and analyzed.Finally,an infrared detector is prepared based on a single GaNxSb1-x NW,and the photocurrent under visible light is measured,which provide the foundation for the next infrared detectors.