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P-type CdTe Nanowires: Controllable Synthesis And Nano-optoelectronic Devices Application

Posted on:2014-08-15Degree:MasterType:Thesis
Country:ChinaCandidate:L ZhuFull Text:PDF
GTID:2268330401988753Subject:Microelectronics and Solid State Electronics
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Recently, one-dimensional structure have attracted considerable attentionbecause of the novel physical and chemical properties. Cadmium telluride (CdTe) isan important II-VI semiconductor with a direct band-gap of1.5eV at roomtemperature. p-type CdTe nanowires (NWs) were successfully synthesized byemploying Sb as the dopant via a simple thermal evaporation method. Electricalmeasurements on the single NW revealed a substantial enhancement on the NWconductivity after doping, which could be further tuned in a wide range of4ordersof magnitude by adjusting the doping level. For all the samples, the conductance ofthe NW monotonously increases (decreases) with the decreasing (increasing) of Vg,which is in well agreement with the typical behavior of a p-channel FET, revealingthe p-type nature of the Sb-doped CdTe NWs. Nano-Schottky barrier diodes(nanoSBDs) based on Al/CdTe:Sb NW junctions showed excellent diodecharacteristics with low turn on voltage of+1V, high rectification ratio of>107,small ideality factor of1.67, and large breakdown voltage of17V. By replacingthe hard SiO2/Si substrates with PET substrates, flexible nanoSBDs wereconstructed, which kept the high device performance while also showed the goodstability under strains. It is expected that the CdTe NWs with controlled transportproperties will have important applications in the future nanoelectronics. Wedemonstrate a room temperature processed Nano-Memory device based onAl/CdTe:Sb nanowire. The devices exhibited excellent memory characteristics withthe large modulation ratio in channel conductance between ON and OFF statesexceeding106. The set voltages ranged from+4to+8V, while the reset voltage wasnear identical at0V. The devices also showed good ON and OFF states retentionover a lapse of time of6×104s. By replacing the hard SiO2/Si substrate with PET,flexible memory devices were constructed, which retained the good switchingperformance.
Keywords/Search Tags:CdTe nanowire, controllable doping, Schottky barrier diodes, Nano-Memory device
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