Research And Optimization On Bonding Parasitic Parameters Of Intelligent High-Power Modules

Compared with the traditional half bridge power module,the Intelligent Highpower module has the advantages of high integration,better reliability and high current carrying density.It has become the most critical part of various power related systems,such as intelligent home appliances,clean energy,high-speed rail cars,aircraft,solar energy,wind power generation,etc.The Intelligent High-power module is mainly composed of two parts: power conversion module and logic control module.The power conversion module has three half bridges,each half bridge has an IGBT chip and reverse continuous current diode,which is responsible for power conversion;the logic control module is mainly composed of IC chip,whose main function is to control the operation status of the power module.With the emergence and development of new semiconductor technologies and materials,the switching performance of Intelligent High-power modules has been greatly improved.The rise of working frequency will have a certain impact on the working performance of Intelligent High-power modules.This impact is mainly reflected in the increase of frequency,which will lead to the increase of parasitic parameters,greater electrical stress on the internal circuits,and increase of power modules due to the increasing influence of parasitic parameters on the intelligent high power module,the research on the Intelligent High power module is more and more focused on the parasitic parameters.Aiming at the current mainstream Intelligent High-power module products,this thesis first introduces the schematic diagram and specific working principle of the Intelligent High-power module with the 600V/30 A Intelligent High-power module as the main research object,and expounds the structural characteristics,electrical characteristics and thermal characteristics of the Intelligent High-power module in detail,and introduces the basic theory related to the inductance.Secondly,the modeling process and steps of Intelligent High-power module are described in detail,and then the influence of the number,radius and spacing of bonding wires on the parasitic parameters of Intelligent High-power module is studied by using ANSYS Q3 D Extractor the software models each group of bonding wires respectively,and then carries out simulation experiments to extract and measure the parasitic parameters of bonding wires of Intelligent High-power module,and compares the distribution and change of parasitic parameters under different packaging of bonding wires,analyzes the impact of each bonding parameter on the parasitic parameters,and proposes an optimization scheme for the optimized bonding wires modeling and simulation experiments,using ANSYS Twin Builder software to carry out device level simulation and system level simulation of power chip,the experimental results show that the parasitic parameters of the optimized bonding wires are reduced by more than 15% compared with the original bonding wires,and the overvoltage of the power chip of the intelligent high power module is reduced by more than 20%,which meets the requirements of the optimal design index.Finally,the paper summarizes the whole paper and looks forward to the future research and development in reducing the parasitic parameters of Intelligent Highpower modules.