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Design Of The Microwave Filter Based On Through-Silicon Via

Posted on:2020-10-05Degree:MasterType:Thesis
Country:ChinaCandidate:S S WangFull Text:PDF
GTID:2428330602450742Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
With the development of wireless communication technology,the demand for microwave devices with miniaturization,low power consumption,easy integration and high performance has increased.Moreover,the operating frequency of microwave devices is gradually developing toward millimeter waves or even Terahertz(THz).In particular,emerging markets such as autonomous vehicle radar,sensing,material inspection and medical high-resolution imaging have created an urgent need for electronic devices operating at terahertz frequencies.THz has some unique advantages of high penetrability and strong anti-interference ability,which has attracted great attention and research in many fields.Microwave filters are one of the indispensable passive devices in the THz system.It is of practical market value to study high-performance microwave filters.Based on three-dimensional integrated circuits(3D-IC)and through-silicon via(TSV),microwave filters have excellent high-frequency performance that can work at high performance at THz,and also have the advantages of easy integration of microstrip circuits and high quality factor of metal waveguides.In this paper,the cross-coupled topology will have the simulated and analyzed results through the theory of microwave filter and the extraction method of coupling matrix.The principle of transmission zero(TZ)on both sides of the filter passband is elaborated from the aspects of energy and phase.According to the transmission characteristics of the rectangular waveguide,the dimensional equivalent relationship between the filter model and the rectangular waveguide is derived.An extraction model for the design parameters of the coupled resonant bandpass filter is constructed in HFSS.The curves of single cavity resonant frequency,electromagnetic coupling coefficient,size and coupling coefficient of the single cavity and two-mode cavity,port transition structure and external quality factor varying with model parameters are given by simulation analysis.On the basis of the calculated coupling matrix,a single-layer linear filter,a single-layer folded filter and a multi-layer folded filter simulation model are established in HFSS.All the filters mentioned above are non-cross-coupled resonant bandpass filters with general Chebyshev characteristic response.A single-layer dual-mode filter and a multi-layer folded cross-coupled filter model with generalized Chebyshev characteristic response are established in HFSS.Two TZs are implemented on both sides of the filter passband,which improves the out-of-band rejection ability.Five kinds of microwave filters with different structures and different types are designed based on 3D-IC and TSV,and they are all coupled resonant bandpass filters.The simulation results show that all filters meet the requirements,whose center frequency is 110 GHz,the bandwidth is 3GHz,the insertion loss is less than 2.8d B,the return loss is greater than 20 d B,and the suppression at 105 GHz and 115 GHz is more than 25 d B.
Keywords/Search Tags:terahertz, through-silicon via, cross-coupling, dual-mode, coupled resonator bandpass filter
PDF Full Text Request
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