Research And Design Of Low Noise Amplifier

With the rapid development of artificial intelligence and wireless communication technology and the huge breakthrough of 5G technology,governments have invested more and more resources in 5G communication.China has developed a development plan for 5G core technology.The research on 5G technology by research institutes,universities and enterprises has improved the country's right to speak in 5G communication.On the other hand,with the rapid spread of portable devices,there are more stringent requirements for miniaturization and low power consumption of devices.The miniaturization and low power consumption of the wireless communication radio frequency module are more urgent.The low noise amplifier is an important device for wireless communication,and processes the signal received by the antenna to weaken the noise of the communication module.Therefore,low noise amplifiers are very important to the entire wireless communication system.Low noise amplifiers(LNAs)are essential components in radiometers,radar,electronic countermeasures,and global satellite positioning systems.This thesis firstly introduces the research status and the significance of the selection of low noise amplifiers from the research status and historical background at home and abroad.Secondly,after summarizing the relevant literature,the main design indicators of the low noise amplifier are analyzed,and the process and device characteristics selected by the low noise amplifier are briefly introduced.Then,a monolithic integrated low noise amplifier with 5G WIFI communication is designed for a small single-chip,high-performance application.Finally,the test is completed and the data is compiled,and the research work of the thesis is summarized and the prospect of the follow-up work is put forward.This thesis designs an MMIC low noise amplifier for 5G WIFI communication using the 0.25 ?m GaAs PHEMT process provided by Taiwan Win Semiconductor.Satisfaction index:Frequency:5-6 GHz,GAIN?15.5 dB,NF?1.5 dB,gain flatness?±1 dB,standing wave ratio?1.92;input and output port matched to 50 ?.The low noise amplifier chip designed in this thesis adopts the cascode circuit model,and designs the corresponding bias circuit,input and output matching circuit and interstage matching circuit.The negative feedback network is used to expand the frequency band,improve the gain,improve the input-output standing wave ratio,and exert the low noise and high gain characteristics of the PHEMT circuit.The chip area is small and all components are integrated on a GaAs substrate measuring 0.8mm by 0.75mm.Finally,the implementation test meets the requirements of the design specifications.