Structural Design And Process Study Of Cracking Transient Based On Silicon Substrate

With the development of semiconductor technology,electronic equipment plays a more and more important role in all walks of life.The use of a large number of electronic devices,the corresponding also brings a lot of problems,such as the growth of e-waste,personal information leakage and so on.Transient electronic technology is the key to solve these problems and the future.Transient electronic refers to a circuit or electronic device with a certain function that can receive external specific stimulus signals and respond in time,such as self-damage or destruction of main circuit functions.Transient electrons,on the other hand,are devices and circuits that perform partial or even complete degradation in a given environment.The current transient electronic technology is generally based on new degradable substrate materials and advanced technology,and its general structure is simple,single function,can not realize the complex function of silicon substrate chip.In this paper,a cracking device with silicon substrate structure is proposed.The main research contents are as follows:On the basis of fracture theory,the scheme of introducing stress to the filler metal on the back of silicon wafer is further studied,and it is found that the introduced stress is not enough to make the silicon wafer fracture or realize multi-block fracture.Therefore,the microsphere with higher expansion performance was introduced as the filler to increase the stress and realize the device failure.When the temperature reaches the trigger temperature of the microsphere,the stress caused by the expansion of the hot microsphere can cause the grooved 300?m silicon wafer to fracture.The expansion properties of different kinds of thermal microspheres were evaluated and their reliability under low temperature and temperature cycling treatment was investigated.In the case of biodegradable transient electron,a scheme of embedding microsphere expansion material in hydrolytic encapsulation material was proposed,and the feasibility of the process was analyzed by making a mold with grooves for experimental simulation.In addition,the heat source of the thermal expansion microsphere was analyzed and discussed.Through experiments,it was verified that the electric heating wire was used to convert electrical energy into heat energy,so that the thermal microsphere could absorb enough heat to achieve the purpose of volume expansion,and the failure result of the silicon wafer was achieved.ABAQUS software was used to simulate the stress generated by thermal microspheres under the same embedding volume and different embedding shapes,and the embedding method of square cylinder was determined.Finally,the failure process of degradable transient devices was simulated by using water-soluble encapsulation materials,silicon wafers and expansion microspheres.