Research On Compact Model For Novel Nano-Semiconductor Device

Along with the development of microelectronic technology,compact model of micro-devices become more and more significant.As a bridge to connect device physical characteristics and process integration,an accurate,continue and easy to implement in EDA software device model is crucial.The silicon-based MOSFET compact model including BSIM model and PSP model have been fully developed and become the mainstream in the industry.However,some emerging device models are still under development.In this thesis,we will focus on the research of two novel device models including Negative Capacitance FET and Drift/Diffusion Memristor.The research work including physical mechanism analyze,device modeling,comparison with experimental data,module simulation and circuit design and optimization.A series research results have been achieved as follows.1.A continuous surface potential based compact model of the ferroelectric negative capacitance field effect transistor(NCFET)has proposed,incorporating the multi-domain Landau Khalatnikov(LK)theory with the domain interaction term,polarization relaxation and semi-classical Boltzmann transport theory.For the first time,an analytical solution of surface potential without any empirical fitting parameters is obtained.Based upon it,an explicit expression for NCFET current is derived,taking into account temperature and time dependence.Furthermore,the proposed model physically includes the effects of carrier scatterings and interface traps to capture the variable mobility.The model is validated by an excellent agreement for numerical solutions and experimental results.The successful implementation of this compact model into Verilog-A and demonstration of both Ring Oscillator(RO)and SRAM simulations provides a good assistance to design-technology co-optimizations(DTCO)of NCFETs.2.A compact model of memristor for unifying two switch characteristics,drift and diffusion,has been proposed.The switching mechanism is based on the ion dynamic transport theory at the oxide interface layer.The model is verified by experimental data in different oxide-material-based drift memristors and new emerging diffusion memristors.Under parameter variations and temperature evolution,this model well fits DC/AC characteristics of both devices.Moreover,the compact model is coded in VerilogA,and implemented in a vendor CAD environment.As case studies,the application of this model in neuromorphic circuit design to replace the traditional CMOS circuits are shown.