The Photoelectric Characterization Of Flexible Inorganic PIN Photodiodes

With the rapid development of microelectronics industry,people have more requirements for electronic products.Flexible electronics develops rapidly due to its advantages of light weight,flexibility and resistance to impact.Now,the wide use of light in the field of information transmission and detection makes the voice of flexible optoelectronic devices higher.Flexible optoelectronic devices have become an inevitable trend in the field of flexible electronics.Therefore,this paper focuses on the fabrication process and characterization of flexible single-crystalline silicon and germanium nanomembrane p-intrinsic-n(PIN)photodiodes.Firstly,several kinds of existed flexible electronic materials and corresponding production method were introduced.Then,the design,fabrication and testing process of flexible PIN photodiode used in this project are introduced in details.The test results show that the flexible PIN photodiodes have perfect performance and are well endurance to bending deformation.At the same time,in order to have a further understanding of the performance and internal working mechanism of flexible PIN photodiodes,the simulation methods were used to analyze flexible PIN photodiode.Firstly,the technology computer aided design(TCAD)is carried out,and the main factors that affect the performance of flexible PIN photodiode are mainly observed.Subsequently,the stress finite element simulation analysis of the flexible PIN photodiode is carried out.It is found by simulation that the geometric center of the flexible PIN photodiode is the place where possesses the max stress under bending state,and also the place where the fracture or displacement is most likely to occur.Finally,the factors influencing the flexible PIN photodiode current characteristics were analyzed,including intrinsic region scale of flexible PIN photodiode,the incident light conditions and active layer materials,etc.At the same time,for some unique properties of nanomembranes and flexible substrate,which may change the flexible PIN photodiode photoelectric properties,were also analyzed.