Optimization Design For L-band RF Back End With 180nm CMOS Technology

This study focuses on 180 nm CMOS process of L-band dual channel RF back-end optimization design.This back-end of the RF receiver contains two channels,each channel contains high gain and high linearity two work links,each work link contains B1,B3,L1,F1 four work modes.The high gain link of the receiver's backend includes PGA,high-gain CF,VGA and ADC.The high linearity link of the receiver's backend includes high linearity CF and buffer.This study proposes a programmable gain amplifier(PGA),which optimizes the image suppression performance of the high gain link.The IQ mismatch automatic calibration algorithm is mainly based on a symbol signal detection algorithm,binary tree search algorithm and signal frequency adaptive algorithm.This study also implements a high linearity complex filter,which can optimize the linearity of high linearity link.The proposed CF is based on spectrum shift principle of leapfrog low pass filte.The leapfrog filter is mianly based on the integrator,but the stability is higher than the integratorThe post simulation of high gain link's back end shows that this architecture can get 3 dB-54 dB total gain and 59 dB image rejection ratio.The power supply voltage is 1.8 V and the average current of one channel of is 11.62 mA.The post simulation of high linearity link's back end shows that this architecture can get 3 dB voltage gain,19 dBm output 1dB_CP,6.193 dB noise coefficient and 25.65 dBm OIP3.The power supply voltage is 1.8 V and 3 V and the average current of one channel of is 25.38 mA.This paper also gives a whole layout architecture and the test results of the receiver chip.The total area this chip is 9.24 mm~2 and the high linearity CF and PGA's area is 0.5 mm~2 and 0.11 mm~2 respectively.