Transferable Silicon-based Gallium Nitride Near-ultraviolet Communication Chip

As a third-generation semiconductor material,Ga N has received widespread attention due to its excellent performance.In particular,light-emitting diodes and lasers in the blue-wave band have been developed quite fast.Therefore,photovoltaic devices in the ultraviolet band have become the next hot trend in the research of Ga N-based semiconductor materials.In addition,in order to cope with increasingly complex application scenarios,epitaxial growth on conventional substrates cannot meet more and more demands,and substrate transfer technology emerges as the times require,providing new ideas for the development of wearable smart chips.This paper mainly studies the material growth and preparation process of GaN-based communication chip on silicon substrate in near-ultraviolet band,and studies components in the near-ultraviolet communication system,including light source,channel and optical receiver,and simulates the transmission loss in the optical waveguide.The main processes in the preparation process such as photolithography process,etching process,electron beam evaporation process and annealing technology process are studied,and the prepared near-ultraviolet communication chip is transferred from the silicon substrate to the glass substrate by mechanical transfer method.After that,the prepared chip was subjected to morphology analysis using an optical microscope,a field emission scanning electron microscope,and an atomic force microscope to verify the processing quality of the chip.The photoelectric properties of the chip are characterized by measuring the photocurrent,electroluminescence spectrum and detection spectrum of the device,and the phenomenon that the quantum well light-emitting diode can detect light while emitting light is proposed.Finally,the communication performance and communication quality of the chip are tested.