| With the rapid development in the wireless communication,the cellular phones has recently fueled the demand for RF Power Amplifiers(PAs)that are able to operate with multi-band,The conventional approach which using a dedicated single-mode single-band PA for each communication circumstance is no longer suitable due to its excessive size and cost.So instead,the PA manufacturers have studied the multi-band PA structures that cover several frequency bands using a single PA core and a tunable impedance matching network.Impedance matching means no reflection at the junction of transmission line with different impedance.It determines the transmission efficiency,power capacity and working stability of system.This study presents the design and measurement of an on-chip tunable impedance matching network.based on lumped element(L,C)and fabricated under 0.18-μm SOI CMOS technology.The matching network employs special transistors as switching components to turn on and off the capacitors and the inductor array and operate at 1880-1920 MHz band,2010-2025 MHz band and 2300-2400 MHz band which is used of TDCDMA.The simulation and measured results shows that the matching network has a good performance of smith chart coverage and power transmission. |
