Performance Of Sn Doped ZnO Films Prepared By Ultrasonic Spray Pyrolysis Method

Zinc oxide(ZnO)is an excellent semiconductor material with wide bandgap(about 3.37 eV),which is widely used in various fields due to its advantages such as large exciton bound energy(60 meV),high light transmittance,low dielectric constant and good temperature stability.In this paper,the controlled growth of Sn doped ZnO thin films with high quality was achieved under different growth conditions by ultrasonic spray pyrolysis.The main work is to grow ZnO:Sn films on the glass substrate by controlling the substrate temperature(425??450??475??500?? 525?),doping concentration(0at.%?1at.%?2at.%?3at.%?4at.%?5at.%?6at.%)and Spraying time(8min?12min?16min?20min?24min?28min),and annealing the grown film samples to obtain sn-doped ZnO films with excellent performance.At the same time,XRD equipment was used to characterize the crystallization performance of the film samples.The results showed that the Sn doped ZnO film prepared in the experiment was a single crystal film growing along(00L)direction,and the substrate temperature,spraying time and doping concentration did not change its crystal structure,but its crystallization performance could be improved.The visible light transmission of ZnO:Sn thin films was characterized by an uv-visible spectrophotometer,and its optical band gap was calculated by combining theoretical knowledge.With the increase of substrate temperature,the visible light transmittance of ZnO:Sn thin film gradually decreases,and the optical band gap first increases,then decreases,then increases and finally decreases.With the increase of doping concentration,the visible light transmission of ZnO:Sn thin film firstly increases,then decreases,then increases and finally decreases.The ultraviolet absorption after doping is higher than that of the undoped ultraviolet absorption,and its optical band gap generally shows an increasing trend with the increase of doping concentration,and slightly decreases at the doping concentration of 3at.%.With the increase of spraying time,the visible light transmittance of the film decreases,and the optical band gap also increases first,then decreases,then increases and finally decreases.The above results show that substrate temperature,doping concentration,spraying time and other growth conditions can effectively regulate the optical band gap of ZnO thin films,providing a good experimental reference for the application prospect of ZnO:Sn thin films in optical devices and other fields.Contact Angle tester was used to test and analyze the contact Angle of ZnO:Sn thin film,and the results showed that most of the samples of Sn doped ZnO thin film presented non-wetting state,with good hydrophobicity,and had such advantages as non-aging,long service cycle and good self-cleaning function in the actual use process.The conclusion of this paper provides some data for the application of ZnO:Sn thin films in various fields,and makes its application direction more perfect.