Theoretical Modeling And The Study Of Process Of Lateral PIN Blue/violet Photodetector Gated By Transparent Electrode Based On SOI

According to Rayleigh scattering,the scattering intensity of light waves in the atmosphere is inversely proportional to the fourth power of the wavelength.For the long-wave and near-infrared light in visible light,the polarization is poor.The blue-violet light band(380 to 520 nm)has a shorter wavelength and stronger polarization,which is more suitable for detection of photodetectors.At present,most blue-violet photodetectors are individual field effect type or individual bipolar type diodes.There are their own disadvantages,the quantum efficiency and frequency characteristics cannot be achieved simultaneously,which is disadvantage to integration.Following several aspects have been researched in this paper on the base of lateral PIN photodiode gated by transparent electrode fabricated on SOI film(SOI LPIN PD-GTE).1.Based on the Poisson equation,an analytical model of the device's gate voltage is established,and numerically calculated by MATLAB.Compared with the simulation results,it was found that the gate voltage of the weak reversed channel surface was 0.2145V,and that the strong inversion gate voltage on the surface is 0.5105 V.The correctness of the analytical model is verified.2.Based on the continuity equation,analytical models of the dark current of the device and the photocurrent at an incident optical power of 1mW/cm2 are constructed respectively.The analytical models of photocurrent and dark current are calculated by using MATLAB.The numerical calculations of photocurrent and dark current are consistent with the simulation results.The results are fitted very well,which verifies the validity of the analytical model.The photo/dark current ratio was studied.It was found that the gate voltage value was 1.7V when the signal-to-noise ratio(SNR)attain the best.3.The process simulation of the device have been achieved by using the ATHENA module of SILVACO software.The I-V characteristics of the device obtained from the process simulation with that from the ATLAS module software modeling is compared.The results match well in fitting,which confirms the correctness of the process.4.The temperature-dependent gate voltage analysis model was constructed.And the numerical calculations are performed by using MATLAB to verify the correctness of the analytical model.The I-V characteristics of the device under different temperatures are simulated and analyzed by the ATLAS module.The results show that the SNR firstly decreases,and then increases until it reaches the maximum value,and finally decreases rapidly with increasing gate voltage at the same temperature.The SNR reaches a maximum of 6.11×105 when T=25?,VGK?1.44V,and drops to 1.0643×103 at T=75? and VGK=2V.