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The Equivalent Circuit And Electrical Characteri-Stics Of TSV In Full Band

Posted on:2019-08-31Degree:MasterType:Thesis
Country:ChinaCandidate:G WangFull Text:PDF
GTID:2428330566967576Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
With scaling of process technology nodes,the length and density of interconnects increase,it results in the increase of resistance and capacitance delay of the global interconnection.Thus the power consumption and noise interference cannot be ignored,which has adverse impact on the global interconnection.Through Silicon Via(TSV)can provide shorter transmission paths and higher bandwidth.Three-dimensional integrated circuits based on TSV have become a trend in the future.However,TSV has its own parasitic resistance,parasitic capacitance and parasitic inductance.When TSVs transmit signals as interconnects,these parasitic effects can have an effect on signal integrity,which can affect the performance of the entire circuit when circuit-level simulations of 3D ICs are performed.Therefore,it is very necessary to establish an exact equivalent circuit model for TSV and conduct in-depth research on its electrical characteristics for use in the design and simulation of the entire three-dimensional integrated circuit.Since the common cylinder TSV structure and the silicon substrate together constitute a metal-insulaing layer-semiconductor structure,according to the electromagnetic theory,the TSV will behave as a slow wave mode,a quasi-TEM mode,and a skin effect mode depending on the operating frequency.This project aims at the most commonly used cylindrical TSV structure,based on the way of the equvilent circuit of quasi-TEM mode,and structural parameters and physical parameters,extracts the parasitic parameter model,and establishes the equivalent circuit of slow wave mode and skin effect mode.Finite element analysis software HFSS was used to verify the equivalent circuit in slow-wave mode and skin effect mode.ADS software was used to simulate and analyze the influence of TSV structural parameters on TSV electrical parameters.The transmission characteristics of TSV were analyzed through S-parameter simulation.Then,this project aims at the novel coaxial-toroidal TSV(CA-TSV)structure,according to the transmission line theory,extracts and uses HFSS software to verify the analytical parameters of electrical parameters such as parasitic parameters,characteristic impedance,power,time constant,and insertion loss.The influence of structural parameters on its electrical performance was analyzed using MATLAB software.Finally,the insertion loss of columnar TSV and CA-TSV was compared using HFSS software.The results show that for cylinder TSVs and CA-TSVs,changing in the structural parameters such as radius,spacing,and height have a certain influence on the electrical properties of TSVs.The electrical characteristics of the TSV can be improved by increasing the radius and spacing of the cylindrical TSVs or decreasing the height,by decreasing the CA-TSV internal diameter,or increasing the external diameter.From the perspective of insertion loss,the applicable ranges of CA-TSV and columnar TSV are 0 to 35 GHz and 35 GHz or more,respectively.The research on the TSV equivalent circuit and the study of the electrical characteristics established in this project can provide a theoretical basis for the circuit-level analysis and simulation of TSV when applied to three-dimensional integrated circuits.
Keywords/Search Tags:3D IC, through-silicon via, electrical performance
PDF Full Text Request
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