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Keyword [Indium nitride]
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1. Growth And Properites Of Novel Semiconductor Materials
2. A First-Principles Study Of Nitrogen Vacancy Induced Phase Transition Of Indium Nitride
3. The Synthesis Of InN And SnO2 Semiconductor Nanomaterials And Their Properties Studies
4. Study On Growth Of InN/InGaN Nanostructure By CVD
5. Low Temperature Growth Of Polycrystalline InN Films On Non-crystalline Substrates By Atomic Layer Deposition And Fabrication Of Thin Film Transistor
6. Epitaxy and structural characterizations of green and deep green gallium indium nitride/gallium nitride light-emitting diodes
7. Overcoming the efficiency droop in gallium indium nitride light-emitting diodes and novel technologies for c-plane gallium indium nitride polarized emitters
8. Electrical and cathodoluminescence studies on the efficiency of gallium indium nitride/gallium nitride light emitting diodes
9. Indium nitride growth by metal-organic vapor phase epitaxy
10. Indium gallium arsenide and gallium indium nitride arsenide(antimony) 1064 NM photodetectors and solar cells on gallium arsenide substrates
11. High-performance 1.55-uM gallium indium nitride arsenide antimonide lasers grown on gallium arsenide
12. Temperature dependent characteristics of Gallium nitride/Gallium-Indium nitride based light emitting diodes
13. Band-edge optical properties of gallium indium nitride arsenide (antimonide) and the relation to atomic structure
14. Growth of 1.5 micron gallium indium nitride arsenide antimonide vertical cavity surface emitting lasers by molecular beam epitaxy
15. Hall effect and photoconductivity lifetime studies of gallium nitride, indium nitride, and mercury cadmium telluride
16. Micro and nano-structured green gallium indium nitride/gallium nitride light-emitting diodes
17. The growth of gallium nitride and indium nitride by molecular beam epitaxy
18. Molecular beam epitaxy of gallium indium nitride arsenide for optoelectronic devices
19. Numerical simulation of semiconductor light emitters based on the aluminum gallium indium nitride material system and based on novel multiterminal gallium arsenide thyristors
20. Indium nitride devices for next generation tera-hertz technology
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