Preparation And Characterization Of Oxide Semiconductor Surface-enhanced Raman Substrate

The oxide semiconductor surface-enhanced Raman scattering?SERS?substrate has the characteristics of easy availability of raw materials,simple preparation and abundant surface morphology.Its enhancement effect mainly comes from charge transfer.And compared with noble metal SERS substrate,the Raman activity of semiconductor materials is weak.In this paper,two methods for preparing higher SERS active substrates are proposed.First,the use of semiconductor materials with variability morphology and the combination of precious metal materials for the preparation of highly active SERS substrates;Second,increasing the charge transfer rate by the non-stabilized structure containing a rich charge hole pair.It mainly includes three aspects:1?The Preparation and characteristics of Cu₂O/Ag composite substrate.The substrate was prepared by thermal oxidation and magnetron sputtering under different heating time,heating temperature and coating time.The XRD test results show that the substrate is Cu₂O/Ag composite structure;SEM results show that the surface of the substrate exhibits a flower-like structure;Raman spectroscopy results show that the substrate has good SERS activity.Study on the SERS characteristics of the substrate,the minimum detection limit of the substrate to MB was 10^-8M,the enhancement factor reached 10⁸,and the RSD of the substrate was less than 10%during the uniformity test.2?The Preparation and characteristics of ZnO/Ag composite substrate.The ZnO/Ag substrate was prepared using hydrothermal method and silver mirror reaction at different silver nitrate concentrations.The results of XRD test showed that ZnO structure with higher crystallinity;SEM test results show that ZnO is a nanorod structure;and Raman spectroscopy results show that the substrate has good SERS activity.Study on the SERS characteristics of the substrate,it was found that the minimum detection limit of the substrate to 4-MBA reached10^-8M,and the substrate has a ability of quantitative detection within a certain range.3?The Preparation and characteristics of Cu₂O/Cu₃O₄ composite substrate.Cu₂O/Cu₃O₄Substrate prepared by Thermal Oxidation and Magnetron Sputtering at different sputtering Times.The XRD test results show that the substrate is Cu₂O/Cu₃O₄ composite structure;SEM test results show that the substrate surface is composed of nano-particles;and Raman spectroscopy results show that the substrate has good SERS activity.Study on the SERS characteristics of the substrate,the minimum detection limit of the substrate to MB was 10^-8M,the RSD of the substrate was less than 10%during the uniformity test.And by comparing the Raman peaks of Cu₂O substrates and Cu₂O/Cu₃O₄ substrates with similar morphology,the feasibility of using non-stabilized structures to improve the SERS activity of semiconductor materials was verified.