The Study On Wearable Fiber-shaped Organic Micro/Nanometersized Single Crystalline Field Effect Transistors And Circuits

As a fundamental building block of modern integrated circuits,the integration of fieldeffect transistors into textile systems is highly important.Organic single-crystal field-effect transistors on fiber-shaped substrates have huge development potential because they have unique advantages of an inherently low operating temperature,light weight,excellent electrical performance and flexibility.In this paper,we successfully prepared highperformance organic single-crystal FETs and logic circuits on ultra-fine and flexible Au wires with diameters as small as 15 ?m via traditional layer-by-layer deposition technique and novel jigsaw puzzle method,respectively.In the process of traditional technique.This kind of devices were fabricated via dip-coated insulators,transferred organic single-crystal by mechanical manipulation with microprobe,and then prepared drain and source electrodes,made by gold-layer sticking technique.Our best Cu Pc device had a field-effect mobility as high as 0.4 cm2V-1s-1 fabricated on ultra-fine Au wires with diameters as small as 15 ?m,and it is also the minimum size among the reported fiber-shaped OFETs.We also present a simple and effective jigsaw puzzle method to fabricate devices instead of traditional method.In this process,the device is pre-prepared on a flat rigid substrate and then peeled off and transferred on the ultra-fine Au wire.The Cu Pc and F16 Cu Pc organic singlecrystal field-effect transistors were fabricated on ultra-fine Au wires with diameters as small as 15 ?m via jigsaw puzzle method.The field-effect mobilities of the single-crystal devices on such small Au wires were 0.07 and 0.04 cm2V-1s-1 for Cu Pc and F16 Cu Pc,respectively.Meanwhile,a organic single-crystal complementary inverter was fabricated for the first time which shows output voltage behavior with excellent logic-level conservation.The absolute value of the voltage gain of our inverter on an ultra-fine Au wire was as high as 8.2 and 7.7.To investigate the mechanical stress-durability of the devices prepared on Au wires,bending experiments were performed on the devices.The devices maintained good transistor performances even at a tensile strain of R=0.5 cm.Furthermore,We also optimized the preparation process of the jigsaw puzzle method to broaden this method advantages.