Preparation And Characterization Of Two-Dimensional SnO And Cu-Doped SnO Semiconductor Field-Effect Transistors

Two-dimensional materials are considered to be the most promising materials for the development of next-generation high-performance electronics,optoelectronics and valley electronics.Although the metal oxides have been widely used in the manufacture of many advanced devices,there are few reports on their performance under two-dimensional extreme conditions.Recently,the research of SnO two-dimensional semiconductor materials and devices has attracted widespread attention.According to the reports,SnO has a direct bandgap of 2.7eV and an indirect bandgap of 0.7e V,its hole-mobility can reach 641cm²V^-1S^-1.SnO has a larger electron affinity,a small ionization potential and exhibits bipolar conductivity.These findings make the SnO monolayer a promising 2D material for nanoelectronic devices.For the characteristics of SnO semiconductor two-dimensional materials,the following research work has been carried out in this paper from the aspects of material preparation and new two-dimensional SnO semiconductor device characteristics:1.Using magnetron sputtering,two-dimensional SnO and Cu-doped SnO thin films were prepared and characterized.In the experiment,a high-purity Sn O ceramic target and a Cu metal target were used.When Cu was doped,sputtering was performed using a dual target.In the research,by changing the sputtering power and deposition time,different two-dimensional SnO thin film samples and different Cu doping ratio preparation parameters were studied,and the corresponding relationship between different parameters and Cu doping amount was analyzed.2.The microstructures and chemical compositions of the two-dimensional SnO and Cu-doped SnO films were analyzed and compared,and the surface morphology and growth orientation of the films were examined.Studies have shown that the two-dimensional SnO film prepared has a thickness of a few nanometers to a dozen nanometers and belongs to a two-dimensional film with a tetragonal crystal structure.Under different preparation conditions,the doping amount of Cu in a two-dimensional SnO film is reduced.About 1,2,4,6%,respectively.3.The fabrication of Sn O and Cu-doped SnO semiconductor field effect transistors with bottom-gate and top-gate structures was carried out,and prepared for different Cu doping ratios,different gate voltages,sputtering powers,deposition times,channel widths,and annealing conditions.The electronic properties of two-dimensional SnO and Cu-doped SnO semiconductor field-effect transistors are compared.The results show that Cu doping can effectively improve the output characteristics of two-dimensional SnO thin film transistor devices.At the same time,the reduction of sputtering power,deposition time and channel width can also improve the quantum transmission effect of the device and increase the source and drain current of the device.The maximum I_DS achieved by the experimental test reached81.6?A.Comparing the output characteristics of bottom-gate and top-gate structures of two-dimensional SnO thin-film transistor devices,the results show that the two-dimensional SnO thin-film transistor devices with top-gate structure are superior to the output characteristics of bottom-gate structures.The results of the dissertation show that the Cu-doped SnO can effectively improve the electron transport properties,and the top gate structure has advantages in preparation,testing and industrial applications.