The Misconstructural Damage Research Of GaP And GaN Crystal Irradiated By Fe Ion

The rapid development and application of semiconductor materials have made the human into the information age,the rapid processing and transmission of information are causing profound changes in the fields of economy,science and technology,and military affairs.The rapid development of traditional semiconductors(first and second generation semiconductors)represented by Si and Ga As,has greatly advanced the high-speed development of optoelectronics and microelectronics technologies.With the rapid development of aerospace,space defense,cloud computing and other technologies,the work environment of semiconductor materials have be put forward New demands: such as high frequency,high voltage,high power,high temperature,strong radiation et al,the traditional semiconductor(first and second generation semiconductors)is difficult to meet application requirements.Ga N,Si C material has great potential in the manufacture of various new types of electronic devices with its unique performance advantages,therefore,it is known as the third-generation semiconductor material with the best development prospect in modern times.In this dissertation,the microstructural damages of Ga P and Ga N irradiated with 340 Me V 56Fe13+ and 350 Me V 56Fe21+provided by the HIRFL accelerator,were characterized and analyzed.1?The experimental results of Ga P irradiated by 340 Me V56Fe13+show that with the increase of irradiation ion fluence,local disorder and defects were produced in Ga P crystal.Raman spectrum reveals the intensity of scattering peaks gradually weaken and some scattering peaks gradually disappear,however,no changes in the peak position were found.XRD measurement displays that the intensity of diffraction peaks gradually decreases.Results from FTIR of spectra exhibits that the intensity of reflection peaks gradually increases,and the FWHM reflection peaks broadens,These phenomena the irradiation of heavy-ion 56Fe13+ produces defects and disorder,leading to a local amorphization.2?The study results of Ga N irradiated by 350 Me V56Fe21+show that with the increase of irradiation ion fluence,Raman spectrum reveals Second-order Ramanscatting be excited.A strong yellow luminescence was observed in the PL spectrum of the pure sample,indicating the presence of vacancy type defects in the unirradiated sample.And the intensity of the emission peak is observed to decrease gradually in the PL spectrum,which means that the radiation introduced defects form non-irradiation centers.