Research On Key Technologies Of High-performance Drive

Si power devices have gone through transistors,thyristors,MOSFETs and IGBTs,and are approaching the theoretical upper limit of materials in terms of blocking voltage,switching characteristics and so on.The third-generation wide bandgap semiconductor device represented by SiC material is one of the fastest growing power semiconductor devices in the field of power electronics at present.SiC materials have high thermal conductivity,high electron saturation migration rate,and high breakdown electric field properties.SiC devices have irreplaceable advantages in high-temperature,high-voltage,high-frequency,high-power electronic devices,and in aerospace,military,nuclear,and other extreme environmental applications.They make up for the shortcomings of traditional semiconductor devices in practical applications and are gradually becoming the mainstream of power semiconductors.In recent years,many companies have introduced commercial SiC MOSFETs,whose switching characteristics and drive circuits have become the focus of research.Based on 1700V SiC MOSFET device,this paper firstly builds a double-pulse test platform,tests the switching characteristics of SiC MOSFET using the drive module recommended by CREE,analyzes its performance,and analyzes the effect of gate drive resistance and bus voltage on switching characteristics and switching losses.A short circuit test was performed to verify that the desaturation detection method can turn off the SiC MOSFET in time and protect the circuit and device from damage.Through experiments,the high-voltage,high-frequency,and power consumption characteristics of SiC MOSFET devices in specific applications have been clarified,which will guide the development of targeted devices.By comparing the difference in drive characteristics between Si devices and SiC devices,the requirements of the SiC MOSFETs for the drive circuit are clarified.The design ideas of each part of the drive circuit are described.Based on this,a drive circuit based on SID1182K chip is designed,including isolated power supply part,signal isolation part,protection detection,and drive circuit module.And the simulation of the various parts of the circuit were analyzed,the parameters of each part of the circuit were determined,the PCB design of the driver board was completed,and the power board was debugged.Simulation and experimental results show that the drive circuit can implement various functions and can drive the SiC MOSFET module to work normally.It has great practical value and meets the design expectations.