Preparation And Properties Of Resistive Random Access Memory Based On Organic-inorganic Hybrid Perovskite

With the rapid development of information technology,people are increasingly demanding information storage.Due to the disadvantages of high cost,complicated fabrication process,and low storage density,traditional silicon-based memories can no longer satisfy people's requirements for information storage.Therefore,the development of new types of memory materials and devices to replace traditional silicon-based semiconductor memory technologies has become an issue for the electronics industry.Urgent problems.Organic-inorganic hybrid perovskite materials have advantages such as high mobility and long carrier diffusion length,which can be used as a storage medium and can be prepared at a low temperature and large area by a solution method,which has gradually attracted people's attention.However,the organic-inorganic hybrid perovskite materials are easily dissolved and degraded in a humid environment,which hinders the further application of the material as a storage medium resistive memory.Therefore,it is still an important challenge to prepare high-performance resistive memory with long-term environmental stability by a simple and convenient method.In this paper,polyvinylamine iodate?PVAm·HI?and octadiamine iodine were introduced into organic-inorganic hybrid perovskite systems,respectively,to regulate the crystallinity of perovskites and the shape of perovskite films.The appearance and the structure of the perovskite are changed to obtain a high-performance resistive memory with excellent environmental stability.The specific content of this topic is as follows:?1?PVAm·HI is firstly prepared.Under the same molar concentration of organic amines?MAI and PVAm·HI?and PbI₂ both being 1.25 M,PVAm·HI accounts for0%,1%,2%,4%,10%,20%,and 50%molar ratios,preparation of perovskite film as activelayerbyone-stepsolutionmethod,preparationof Al/CH₃NH₃PbI₃+PVAm·HI/ITO resistive memory,and electrical performance and long-term stability of the memory Sexual test analysis.The ON/OFF ratio of the resistive memory having 0%of PVAm·HI is about 10³.With the introduction of PVAm·HI,as the content of PVAm·HI increases,the ON/OFF ratio of the resistive memory increases first and then decreases.Among them,the ON/OFF ratio can reach2×10⁵when PVAm·HI occupies 4%.During 10⁴s,the ON state and OFF state current remain basically the same,and 100 cycles can be repeatedly erased and kept stable.The rate is good.At room temperature and in the atmosphere,the unpackaged resistive memory without PVAm·HI has no switching performance after 3 days,while the ON/OFF ratio of the resistive memory containing PVAm·HI has almost no significant effect within 60 days.By fitting the I-V curve of the device with PVAm·HI at 4%,the HRS?high-resistance state?conforms to the SCLC?Space Charge Limited Current?mechanism,and the LRS?low-resistance state?complies with Ohm's law.?2?Preparation of two-dimensional,quasi-two-dimensional perovskites and three-dimensional perovskite materials BA₂MA_n-1Pb_nI_3n+1?n=1,2,3,4,??,using C(Pb²⁺)=1.8M,Theperovskitematerialpreparedbydissolving N,N-dimethylformamide?DMF?was used to prepare the perovskite precursor solution.The perovskite film was prepared by the solution method as the active layer to prepare ITO/BA₂MA_n-1Pb_nI_3n+1/Al devices,as n increases from 1 to?,that is,the active layer material from two-dimensional to three-dimensional,device ON/OFF ratio gradually decreased.Among them,when n=1,that is,when the two-dimensional perovskite material BA₂Pb₁I₄ is used as the active layer,the ON/OFF state current ratio is kept constant within 4×10⁴,10⁴s,and the ON state and the OFF state current remain basically unchanged within 100 pulse cycles.At room temperature and atmosphere,the non-encapsulated three-dimensional perovskite material CH₃NH₃PbI₃as the active layer resistive memory has no switching performance after 3 days,while the two-dimensional or quasi-two-dimensional perovskite material acts as the resistive layer of the active layer.There was almost no significant change in the ON/OFF ratio over 60 days.