| For some photoelectric devices such as semiconductor optical amplifer and semiconductor lasers,the gain characteristics are the important parameters.In optical fiber communication,in order to ensure the device effectively in practice work,usually required when temperature changes,gain is not sensitive to light polarization.AlGaInAs material is used in the structure,as compared with the commonly InGaAsP material,different AlxGayIn1-xyAs materials composed of semiconductor conduction band discontinuity between alloy is larger,the electronic limit potential energy increased significantly,which can more effectively prevent electronic leaked through the barrier,Therefore,reasonable design of quantum well structure is required to gain a better job performance and its temperature characteristic is better.The band theory of strain quantum well materials were introduced in this paper,and the corresponding gain model was presented.Firstly,analysis of the critical thickness,strain energy band structure of quantum well material,the influence of band gap width and belt edge discontinuity,using Kronig-Penny perturbation theory and Lowdin normalization theory,giving the conduction band,valence band and wave function.On this basis,the effect of shrinking and the conveying belt gap of spectral lines broadening effect to solve the expression of the gain spectrum of quantum well and gain polarization correlation description is given.Using MATLAB to simulation analysis the material gain characteristics of AlGalnAs single quantum well,The influences of strain,well width and carrier concentration on the material gain of TE mode and TM mode of quantum well are analyzed.A mixed strain MQW with low polarization sensitivity of gain within C band has been designed.The polarization dependence of mode gain of the MQW maintains low level(below 2%)as temperature varies from 15 ? to 45 ?.The research content of this paper has certain guiding significance for the optimization design of AlGaInAs quantum well devices. |
PDF Full Text Request