Research On Electrostatic Protection And Integrated Design Of SCB Initiators

Semiconductor Bridge(SCB)igniters are widely used in weapon systems because of their fast action,high security and high reliability.But the safety of SCB should be strengthened in the case of harsh electromagnetic environment.Therefore,in this dissertation,SCB was electrostatic protected by using Schottky diodes.The SCB circuit model was established in PSpice software.The ignition performance and the antistatic performance of SCB after protection were studied with simulation and experiments.According to the results of simulation and experiment,the SCB chip with integrated Schottky diodes was designed in Silvaco TCAD software.The main conclusions are as follows:(1)The SCB circuit model was established in PSpice software according to the relationship between SCB resistance and energy,and the resistance and inductance of the circuit were determined by testing.Under the condition of capacitive discharge(22u F,16V),the ignition performance of SCB was simulated and experimented.By comparing the results,it was found that the first peak coincided basically,the second peak had a certain deviation,and the burst time of SCB was about 5?s.The comparison results showed that the model had a high accuracy.(2)After shunting Schottky diodes,the results of SCB capacitance discharge experiment were basically consistent with those of simulation.When the breakdown voltage of the Schottky diode was small,the Schottky diode was broken down in the process of the voltage rise,and the voltage was suppressed.The Schottky diode divided a lot of energy,and SCB could not ignite normally.When the breakdown voltage was raised to about 9V,SCB could ignite,but there was a certain delay in ignition.When the breakdown voltage was raised to more than 12 V,SCB could ignite normally and the ignition performance of SCB would not be affected.(3)The results of the electrostatic discharge simulation showed that under the discharge conditions(500p F,500?),the Schottky diode with breakdown voltage 12 V could protect the electrostatic discharge below 50 k V and the Schottky diode with breakdown voltage 15 V could protect the electrostatic discharge below 35 k V.(4)The results of the electrostatic discharge experiments showed that the SCB which was protected by Schottky diode has better antistatic performance.After the protection of Schottky diode,the bridge area of SCB was not ablated and the ignition performance of SCB was not influenced.(5)The structures of SCB and Schottky diode were simulated by ATHENA.The resistance of the SCB was about 1.05? and the breakdown voltage of the Schottky diode was 12 V,which were close to the expected value.The process of producing the SCB chips which were integrated Schottky diodes was designed based on the CMOS technology.