The Study On Photoelecric Characteristic Of Perovskite/p-type Silicon Heterojunction

P-type silicon has the qualities of high stability,high hole mobility and technical maturity,so that it maybe the potential hole-transporting materials for perovskite solar cells.In this thesis,the fabrication of perovskite/p-type silicon heterojunction had been introduced and the photoelectric characteristics of the heterojunction had been studied.At first,the theory of simulation to the perovskite/P-type silicon heterojunction photoelectric device by Silvaco simulation software,and the optimized methods and strategies of the performances of the perovskite/P-type silicon heterojunction photoelectric device were discussed.Then,the effects of preparation methods and technology on the CH₃NH₃PbI₃light absorption layer and the influence of C₆₀ thin films with different thickness on the performance of perovskite/P-type silicon heterojunction photoelectric device through the experimental preparation were studied.Combining with the experimental results and theoretical calculations,the influence mechanism to perovskite/P-type silicon heterojunction photoelectric devices from the aspects of carrier transport and recombination was analysed.At last,the preliminary exploration of sensitive characteristics of the sensors prepared by WO₃ and CH₃NH₃PbI₃ perovskite was studied.The main contents are as follows:1.Simulation to perovskite/P-type silicon heterojunction photoelectric device with Silvaco softwareThe simulation model of the perovskite/P-type silicon heterojunction photoelectric device was established by Silvaco software.Under the case of Ag electrode,the PCE of the simulation devices is 5.61%.To compare the simulation of the device with different electrode,different thickness of p-type silicon devices,different thickness of the perovskite light absorption layer,we can conclude the optimal parameters of the devices.2.Effects of preparation conditions of CH₃NH₃PbI₃ film on the filmOne-step solution process had been adopted to prepare CH₃NH₃PbI₃ precursor solution and the effects of perovskite film with different spin speed,concentration and annealing temperature were studied.The results showed that,the suitable spin-coating,the concentration of the precursor and the annealing temperature can prepare the CH₃NH₃PbI₃film with good crystalline quality,high coverage and density and light absorption.3.Effects of C60 thin films with different thickness on the performance of perovskite/P type silicon heterojunction photoelectric deviceThe interlayer of C60 thin film through thermal evaporation to avoid the sputtering damage on the perovskite layer was fabricated.We concluded that,there is a great influence on perovskite/p-type silicon heterojunction photoelectric devices with different thickness interlayer.Through the I-t and J-V curves,the best thickness of C₆₀0 thin film is 50 nm-thick and the photocurrent of the 50 nm-thick C60 thin film was 0.366 mA,the 50 nm-thick C60thin film deposited on the surface of CH₃NH₃PbI₃ has a small operating voltage.4?Preliminary exploration of sensitive characteristics of the sensors prepared by WO₃and CH₃NH₃PbI₃ perovskiteIt was found that the gas sensors prepared by WO₃ and CH₃NH₃PbI₃ perovskite have a better sensitivity than WO3 gas sensors,when passing in the reducing gas NH3,and they have the good photosensitive properties.This is the very interesting feature to study.