| Heterjunction of amorphous silicon and crystalline silicon（HAC）based solar cell has great potential prospects in the field of photovoltaic power due to their advantages of high efficiency,simple process and low temperature coefficient.As the window layer of HAC solar cell,Indium tin oxide（ITO）thin film is responsible for the collection and transmission of photon-generated carriers and the reduction of light reflection.In this thesis,to solve the actual problems in the production of ITO magnetron sputtering（commonly known in the industry as PVD）preparation process,the oxygen content and hydrogen content of ITO process parameters were adjusted and optimized;the problems of sputtering damage and the influence of carrier plate in the process of ITO coating were studied experimentally;the photo-thermal efficiency enhancement of HAC was analyzed from the perspective of ITO.The main results are as follows:1.With Ar-O2 as working gas,high power sputtering of ITO film has better transmission and conduction properties;by adjusting the oxygen content,2.0%has the best photoelectric performance(average transmittance(TVL)at 380-780nm close to 90%,resistivity（ρ）4.29×10-4Ω·cm).With Ar-O2-H2 as working gas,when the oxygen content is 3.0%,ρof ITO film decreases first and then increases,and TVLcontinues to decrease;when the oxygen content was 4.0%,ρcontinues to decrease and TVL increased with the addition of hydrogen content,and the mobility（36.5cm2/（V·s））and transmittance(TVL（29）90%)were higher than 3.0%.2.In the process of PVD growth of ITO film,the problem of ion bombardment damage to the previous deposited amorphous silicon thin film resulted in a serious decrease of minority carrier lifetime of the silicon wafer passivated by the amorphous silicon thin film;The passivation performance of the a-Si:H will decrease if CVD and PVD processes with the same carrier;after CVD process and before PVD process,exprosing the wafer to the atmosphere reduced the passivation effect of the a-Si:H layers,CVD-PVD continuous deposition can significantly improve the passivation performance of the a-Si:H layers.3.After the red photo-thermal,the electrical properties of ITO films decreased（resistivity and carrier concentration increased and mobility decreased）,leading to the decrease of fill factor（FF）and short-circuit current density(Jsc),and the decrease of efficiency of HAC solar cell;The analysis shows that the influence mechanism of light on ITO is actually the heating effect of light.Blue light has greater heating effect than red light,so under the same light intensity condition,it has a greater influence than red light. |
