Research On Fast Pulse Generation Circuits Of Three New Types Of Two-terminal Semiconductor Switches

The fast pulse power technology with output pulse width in the microsecond,sub-microsecond to nanosecond range has been widely used in high-power microwave,low-temperature plasma,biomedical and other fields.The semiconductor switch has advantages such as small size,light weight,high reliability and fast switching speed,which have become an important device for generating fast pulses.The three kinds of power semiconductors: Drift Step Recovery Diode(DSRD),Reverse Blocking Diode Thyristor(RBDT)and Reversely Switched Dynistor(RSD),in fast pulse generation circuit is studied in this paper.They are both four-layered and two-terminal devices with good series voltage balance performance,low power consumption and high power.Among them,DSRD is a opening switch,and RBDT and RSD are closed switches.Firstly,a method for designing fast pulse generation circuit based on DSRD is systematically studied in the paper.The SPICE model is established according to the principle of inductive energy storage pulse generator.Then the optimal working parameters of the circuit are obtained according to the simulation results,and the test platform is built for experimental research.The silicon-based DSRD designed by our laboratory is effectively triggered under test,and a pulse voltage with a peak value of 160 V and a rise time of 6.66 ns outputs on the load,which verifies the circuit design feasibility.A trigger circuit based on Marx generator is proposed for RBDT device.The main circuit,control board and drive circuit board are designed according to the circuit simulation results.The experimental results show that the trigger circuit based on Marx generator can generate pulses with dv/dt over 10kV/?s and successfully trigger RBDT device,output fast pulse current.The paper also analyzes the influence of the voltage of main circuit and the dv/dt of triggering pulse on the device turn-on loss.The integrated modular technology for RSD device is studied to reduce parasitic parameters of the loop and therefore achieve faster short pulse output.The PCB integrated module is designed to operate at 5 kHz repetition rate and steady output pulse current.Heat accumulation of the module under different main voltage and repetitive frequency operating is also discussed in the paper,the factors that limit the output level of the integrated module are mainly in pre-charged loop IGBTs and capacitors.In summary,the related fast pulse generation techniques based on three semiconductor pulse power devices: DSRD,RBDT and RSD are mainly studied in this paper.The results provides a guideline for related field.