The Research Of An Inverted Perovskite Solar Cell Based On NiO Nano Material

What we have to do is the study and exploitation of the new energy sources in the current today's energy-hungry society.Solar energy is a constant source of clean,renewable and cheap energy in the earth's limited life.The research of perovskite solar cell(PSC)is one of the most rapid exploitation of this trend.This paper is mainly based on a better performance,lower cost of inorganic hole-trasporting material NiO applied to the inverted perovskite solar cell to replace the traditional PEDOT:PSS of the inverted cell and spiro-OMeTAD of the formal one,and the research is moving on mainly from three aspects:(1)A simple and mild sol-gel method was used to synthesize the precursor solution of nickel which was applied to the inverted PSCs.The optimal thickness was explored by controlling the concentration of the precursors,and various characterization methods,and we took the various characterization methods,such as J-V characteristic curve,IPCE,electron microscope,etc.The results show that the optimal thickness is 46 nm,and the NiO film layer prepared is very continuous and dense,and reaching over 14%is the photoelectric conversion efficiency.(2)High crystallinity and purity of NiO nanocrystalline precursors were syn-thesized by using simple materials such as acetylacetone nickel,oil amine and toluene with a solvothermal mathod.Preparing the NiO film layer with different concentration was applied to the inverted PSCs device in the research,and we know 5 mg/ml is the optimal concentration by testing the photoelectric performance,while the thickness was 55 nm and the photoelectric conversion efficiency could increase to 15.47%.Comparing the device based on PEDOT:PSS tells us that the NiO nano-crystalline device brought the better photoelectric performance,stability and reproducibility.(3)In order to improve the FTO coverage based on NiO nanocrystals,the FTO was modified with a simple and easily synthesized TiO2 quantum dot solution,and then the NiO film layer was going to be prepared.By adjusting the concentration of TiO2,the photo-electric properties of the device and the underlying coverage were balanced,while the concentration of the precursor was 2.5 mg/ml,and the photoelectric conversion efficiency reached a maximum of 16.12%.Compared with unmodified devices,the coverage of NiO,carrier compound,average PCE and reproducibility were improved.