Study On Preparation Of High Efficiency Inverted Perovskite Solar Cell

In recent years,the development and utilization of solar energy has been became a hot topic at home and abroad.Solar energy is an environmentally friendly and inexhaustible new energy,so it is the first choice to develop and utilize.Solar cells use the photoelectric effect to directly convert solar energy into electrical energy.Solar cells not only are becoming more diverse,but also becoming more efficient at converting light to electricity,especially the new perovskite solar cells,which in just over a decade have achieved the similar efficiency as silicon-based solar cells.However,due to the variety and composition of perovskite solar cells,the efficiency of inverted perovskite solar cells is not very high and there is a large space for optimization.Therefore,the main goal of this paper is to prepare inverted perovskite solar cells with high power conversion efficiency.Fast transport and efficient extraction of charge is necessary for preparation of high efficient perovskite solar cells.For inverted cells,hole transport layer not only has rapid transport hole effective block electronic effect,but directltly affects perovskite film quality as the basal of perovskite deposits,which has a great influence on device performance.By comparing the spin coated nickel oxide sol-gel method with the spin coated nickel oxide nanoparticle method,the exploration and optimization of the preparation method of hole transport layer of inverted devices were realized.Through the statistical analysis of the experimental data,the results show that the device with good performance and high reproducibility can be prepared by using the spin coated nickel oxide nanoparticles dispersion solution,and the optimal efficiency is up to 17.27%.Then we introduced graphene quantum dots containing graphite nitrogen into the perovskite precursor as additives to realize the effective transmission of charge,and the resulting inverted perovskite solar cell achieved a power conversion efficiency of 19.8%.This is largely due to the presence of nitrogen can also provide perovskite crystal nucleation sites and further by lewis acid-base action effective passivation of the perovskite defects,which reduce the charge recombination.At the same time because of the graphite nitrogen shows an n type doped semiconductor features after the introduction of graphene quantum dots,making Fermi level of perovskite membrane up,energy level structure more match,finally achieved effective extraction and fast transport charge,and the stability of device is also improved because of the more hydrophobic modified film.Finally,the fabrication target of inverted perovskite solar cell with high power conversion efficiency,good device stability and excellent performance was achieved.