Application Study Of Water-cooling Inverter Based On SiC MOSFET

In recent years,wide band gap semiconductor devices including SiC MOSFET are developing rapidly,and widely researched and concerned by academia and industry.In contrast of traditional silicon devices,they enjoy obvious advantages such as lower loss,higher switching frequency and temperature resistance.The power electronics converters based on SiC MOSFET also show enormous potential.Thus,it is of vital importance to study the characteristics of SiC MOSFET and other realistic problems in its application.To start with,some significant parameters which influence the device’s static and dynamic performance are thoroughly introduced.Then a behavior model in PSpice is established based on the datasheet of SiC MOSFET half-bridge power module CAS300M12BM2 by parameter extraction and the compensation of temperature controlled power supply.The accuracy of this model is verified by static simulation and double pulse test.Compared with Si IGBT,this paper also analyzes the component parts of SiC MOSFET’s loss calculation and how it is effected by temperature,switching frequency and drive resistor.The advantages of SiC MOSFET in loss and temperature resistance are certificated theoretically.Then,a water-cooling heat sink with two different cooling tubes is designed according to the loss calculation and the volume available.The results of loss calculation,simulation and experiment are compared to each other to verify the rationality of the design.The overall design of a three-phase SiC MOSFET inverter is introduced and its performance is tested and compared with a inverter based on Si IGBT.The statistics shows the superiority of SiC MOSFET inverter in efficiency,power quality and power density.