Study On The High Performance Inverter Based On SIC MOSFET

With the birth of the high-voltage direct current transmission and development, the electronic technology, especially plenty of kinds of converter technology, has got great progress, people pay more and more attention to the power density and efficiency of converter etc. But for now, a large portion of the energy loss of the power system is in the power converter, in order to deal with the status of energy shortages, reducing energy consumption has become the urgent need for development, so the development and application of semiconductor switching element is more critical.Compared to Si-based power switches, because of low switching and conduction loss, high frequency switching, high temperature resistance, etc., SiC MOSFET for the high-performance power converter applications is a field in rapid development.The research work is focused on the three-phase SiC-MOSFET inverter, first according to the switching frequency and the size of the current ripple under the SPWM modulation,the high-frequency LC filter is designed and optimized. Additionally, through the analysis of the efficiency and thermal equivalent circuit, the inverter radiator is chosen. Second the comparison and analysis of the SiC-MOSFET inverter efficiency features are made based on three PWM methods, including SPWM, SVPWM and DSVPWM. Finally, the 125 kVA, 20 kHz experimental prototype of the SiC-MOSFET inverter has been designed and tested under different load conditions to verify the design reasonability and SiC-MOSFET inverter high performance.