Raman Spectroscopic Investigation Of Layered ZrGeTe₄ Semiconductor

Nowadays,there are increasing researches on the optical and electrical properties of two-dimensional materials,especially in the fields of polarized photoelectricity and light detection,which has great development potential and can be used to optimize the performance of devices.The direct band gap of zirconium germanium tellurium?ZrGe Te₄?is 0.6eV.Through the analysis of its crystal structure,it has certain in-plane anisotropy,which is one of the ideal two-dimensional materials for studying the interaction between light and matter.At the same time,ZrGe Te₄ has better environmental stability and is expected to be used in polarized optoelectronic devices,polarized thermoelectric devices,bionic devices,polarized light detection and other fields.This paper systematically studies the phonon modes of ZrGeTe₄ layered semiconductors,and explores the corresponding photophysical properties through the angle dependence and temperature dependence of Raman spectroscopy.The main research includes the following aspects:1.First,using iodine as a transport agent,ZrGeTe₄ single crystal was grown by chemical vapor transport method at a temperature of 650degrees Celsius.By scanning electron microscope?SEM?,X-ray energy spectroscopy?EDS?,X-ray diffraction?XRD?,Raman spectroscopy?Raman?and other characterization methods,it was proved that the prepared ZrGeTe₄ sample has a high crystal quality.Then,the polarization characteristics of ZrGeTe₄ were tested by angle-dependent and polarized Raman spectroscopy?ARPRS?,which mainly showed the large in-plane anisotropy of phonon vibration in ZrGeTe_4,and two atomic vibration modes of A₁ and A₂ were detected,with 180 Cyclic Raman intensity displayed.Ten Raman characteristic peaks were detected by density functional perturbation theory,and the strong anisotropy excited by linear polarity was proved.2.The temperature-dependent Raman test was used to analyze the dependence of the electron-phonon interaction on the temperature of the material to further determine the lattice vibration characteristics.For the temperature-dependent Raman characterization of ZrGeTe₄ flakes,when the temperature rised from 80K to 300K,the Raman mode transitions detected by ZrGeTe₄ showed linear temperature dependence,all Raman peaks underwent redshift,and the first-order temperature coefficient?X?of the Raman mode was in the range of 0.0058 cm^-1/K to 0.01831 cm^-1/K.3.The ZrGeTe₄ transistor devices were prepared,and their basic electrical properties?I-V characteristics?were tested and studied.