Study On The Photoluminescence Properties And Plasmon Enhanced Luminescence Of Si~+/N~+ Co-implanted SOI

Silicon-based luminescent materials have been widely concerned as a necessary part for preparing large-scale optoelectronic integrated circuits.The luminescence on visible wavelength from silicon base material is due to the defects of silicon compounds or quantum confinement effect.Ion-implantation is a useful way to put ions into silicon as you wish.Various luminescent center will be formed after annealing process.Apart from improving silicon material to gain the luminescence efficiency,coupling photonic crystal or plasma to enhance the luminescent efficiency is a hot spot.In this thesis,we co-implant Si+ and N+ into silicon film on insulator(SOI)and study on the relationship between annealing temperature and luminescent performance.At last we make a preliminary research on the enhancement of emission intensity by deposition metal film with the photonic crystal structure.The main achievements of this work are listed as follows:1.Low dose Si+/N+ co-implantation into SOI top single crystal SiThe ion implantation and rapid annealing techniques are used to study the N-O bond forming in 400-650? annealing and rupturing after annealing over 700 ?,and its transition to Si-N and Si-O bonds.The non-radiation center of the NOx complex is confirmed by photoluminescence spectrum.The composite center has a strong inhibitory effect on the luminescence of the sample.At the same time,the weak luminescent peak at 390 nm whose evolution law is consistent with the NOx complex is found,and it is speculated that the difference in the orientation of the N-O bond leads to its radiation recombination center and non-radiative composite centers co-exist.The luminescent peak at 400 nm originating from the O defect in SiO2,the luminescence peak at 415 nm originating from the weak oxygen bond defect in SiO2,and the luminescent peak originating from the neutral oxygen vacancy at 445 nm and 460 nm are found.The luminescent peak at 430 nm originating from the electron-radiation transition of ?Si0?N-in ?-Si3N4,and the luminescent peak associated with the O defect of N-Si-O band at 500 nm,etc.The conclusion that the luminescence intensity of the sample is the highest after annealing at 800 ?.2.Plasmon enhanced luminescence with photonic crystal structureThe finite difference time domain(FDTD)software is used to simulate the effect of the metal film with photonic crystal structure on the luminescence performance of the material.It is proved that the introduction of polystyrene(PS)spheres improved the luminescence intensity and gets the best structural parameters.By the Langmuir-Blodgett(LB)method,PS spheres are self-assembled above SOI and etched to a size corresponding to the simulation result using an inductively coupled plasma(ICP)etching machine,and then a 5 nm metal film is evaporated.Finally,all three metal films have a certain,enhancement effect on the luminescence.The intensity of the luminescence peak after the enhancement of Ag and Al films has little relationship with the original luminescence intensity of the sample.While the luminescence intensity of the sample of 1×1014 cm-2 is 2 times that of the sample with N+ implantation dose of 5×1013 cm-2 by Au film.Finally,compare the strongest luminescence intensity the Ag film is 20 times enhanced,and the Al film is enhanced by 10 times.Au The film is enhanced by 12 and 20 times depend on the original luminescence spectrum,respectively.