Study On Silicon-based Luminescence Materials Ion-implanted Modification And Optical Mechanism

Si and Ge are the cornerstones in the microelectronic domain. However, the properties of indirect band-gap make their optical transitions achieve with phonon. Those properties reduce the luminescence efficiencies and the response speed of photoelectric devices. Therefore, the applications of traditional Si and Ge materials are limited in optoelectronic integration and optical interconnects domain. Whereas, ion implantation with appropriate annealing process can make Si and Ge materials obtain photoluminescence at the range from ultraviolet to near-infrared region. Hence, systematic studies on the optical defects and nanocrystalline clusters induced by the implanted and annealing processes and their optical mechanism have a great potential value to realize the optoelectronic integration on one chip.In this thesis, the preparation and optical properties of Ge-embedded SiO2film and Si-self-implanted silicon on insulator (SOI) structure luminescence materials were studied. Structures and evolution route of optical defects and nanocrystalline clusters are studied for modulating the luminescence. The primary achievement and the obtained conclusion of this work are listed as follows:1. The optical properties of Ge-embedded SiO2film with low-implanted energyUltraviolet-visible light emissions from Ge-embedded SiO2films fabricated by ion implantation and rapid annealing technique are studied. The luminescence mechanism is clarified. The crystallinity of film and the optical properties were studied as a function of different fabricating conditions such as implanted dose, annealing temperature and time. Those studies will play an important role in Si-based optoelectronic integration and full-color display.2. Studies on the surface morphologies and the optical properties of self-ion-implanted SOI annealing materialsNear-infrared defect-related emissions from the self-ion-implanted SOI are achived by the ion implantation and rapid annealing process. The evolvement mechanism of defect clusters is demonstrated. The crystallinity, the surface morphologies, and the optical properties of modified SOI materials are studied with different implanting dose, annealing temperature, and annealing time. Furthermore, the structure of Si-self-implanted SOI materials light emitting diode (LED) prototype device and electrode manufacture are designed preliminarily.