Growth And ARPES Study Of Sb Thin Films On Ag Substrate

In recent years,the successful preparation and application of graphene has aroused a wave of two-dimensional material research in the field of condensed matter physics and material physics.Since the beginning of Graphene,graphene-like materials made of single elements,often referred to as "X-ene",such as "Silicene","Germanene","Stanene","Phospholenes",have received continuous attention.As one of the two-dimensional materials that have attracted much attention in recent years,Antimonene has very unique properties,such as adjustable energy band structure,high carrier mobility,topological nontrivial electronic state,etc.It has great potential in the future application field.At present,a lot of theoretical works have been done on Antimonene,while most of experimental works focus on the growth of Antimonene and the characterization of its surface structure,the experimental investigation about the energy band structure is still very scarce.In this paper,two-dimensional Antimonene films are grown on Ag(111)substrate by molecular beam epitaxy.This paper introduces how to obtain high quality Antimonene films by controlling substrate temperature,antimony evaporation source temperature,evaporation time and annealing temperature.Epitaxial growth of Antimonene films on room temperature and low temperature substrates is studied.During the growth process,the arrangement of atoms on the sample surface was monitored by RHEED.XPS was used to explore the combination state of antimony film samples after growth.Finally,the band structures of the obtained Antimonene films were measured by ARPES to explore the properties of the interesting energy band structure.