The Research And Design Of Terahertz Oscillator

The frequency of terahertz in the electromagnetic spectrum lies between microwave and infrared ray.It is the last one that human has not fully recognized and utilized.Because of its low energy,fingerprint spectrum,high penetrating and wide band characteristics,it has broad application and strategic research value.The generation of terahertz signal mainly has two methods,the electronic and photonics methods.The method of THz wave radiating outward through the electron oscillation process has many adavntages.For example,the facilitates is small and the cost is relatively low.Therefore the electronical method is prefered in this thesis to produce the terahertz signal based on silicon technology,and the goal is to produce a tunable signal of 300GHz with high power.It summarizes the knowledge of process and device model which is essential in the design of terahertz oscillator.It compares microstrip line,grounded coplanar waveguide(GCPW),slow wave mode coplanar waveguide(SCPW),and slow wave mode transmission line(SWTL).The performance of grounded coplanar waveguide(GCPW)and slow wave mode coplanar waveguide(SCPW)is prefered from simulation and oscillator measure results.The design method of coplanar waveguide is summarized and the solution of frequently asked question about EDA is also given.It designed three types of triple-push oscillator using different transmission line structures based on the TSMC 65nm GP process and the size of each chip is 0.097mm~2.The layout has been tapeout and measured.The measured results show the circuit with GCPW and SCPW can generate signal of 271.7GHz and 272.7GHz,respectively.Each chip consumes only 48mW.It also designed injection-locking oscillator using coupling structure based on the TSMC 45nm GS process.The fourth harmonic of the oscillating signal is used as the final output signal,which has a tuning range between 271GHz and 291GHz,and the relative tunable bandwidth is 7.1%with-13.8dBm of average signal power.The whole circuit consumes 456.3mW.The design of layout has been completed and the chip size is 0.68mm~2.