Luminescence Properties And Vertical Distribution Of Defects Induced By Si~+/Ni~+ Co-implantation On Si Films On SOI

Crystalline silicon(c-Si)is one of the most important semiconductor materials in the electronics and photovoltaic industries today,but due to its indirect band gap characteristics,electrons and holes must recombine and emit photons under this band structure,which involves the participation of phonons and results in poor light emission efficiency of Si.The optical defect is introduced inside the Si by means of ion implantation,and electroluminescence(EL)and photoluminescence(PL)from the communication band to the visible band have been obtained.Therefore,the research on the mechanism,distribution and luminescence properties of the internal luminescence center has important significance for the future all-silicon-based microelectronic-optoelectronics industry.In this thesis,the Si+/Ni+ co-implantion of SOI top Si film is studied for its photoluminescence properties.The origin of the luminescent center,the concentration distribution of the luminescent center,and the influence of the implantation dose and annealing temperature on the luminescence properties were studied by thermal annealing and ICP etching.The main research contents and results of the thesis are as follows:1.Si+/Ni+ was implanted into the top Si film of SOI substrate by ion implantation equipment,and the radiation recombination center was introduced into the Si film by thermal annealing technique.The photoluminescence of the sample from visible to near-infrared was investigated.The photoluminescence spectra of the samples were characterized for different annealing temperatures,implant doses,and test temperatures.The formation mechanism and origin ofeach luminescent center were studied.The effects of annealing temperature,test temperature and implantation dose on the crystallinity and luminescence properties of the samples were analyzed.The luminescence peaks at the center peaks at 2.85 and 3.03 eV were found in the visible light band,which originated from the neutral oxygen vacancy defects and weak oxygen bond defects in the sample species,and blue-shifted as the annealing temperature increased.Defect luminescence with a central peak at 0.813 and 0.928 eV was observed in the near-infrared region,which originated from the point defects caused by the strain region and the defects of the chain structure in the Si matrix,and had good temperature stability.2.In order to refine the rate of etching the Si wafer by the inductively coupled plasma(ICP)etching machine,the etching rate of the Si wafer is first calibrated,and the sample after ion implantation and thermal annealing is stepwise etched by using an ICP etching machine.And then the stepwise etched samples were characterized by photoluminescence and X-ray photoelectron spectroscopy(XPS),and the dependence of the photoluminescence intensity on the etching depth was studied to investigate the concentration distribution of the luminescent center and the injected elements.By comparing the PL spectrum,dependence of PL intensity and etch depth,the PL difference spectra of defect luminescence peaks at 0.813 and 0.928 eV after step etching,the concentration distribution of these two defect luminescent centers in the Si film was determined.The luminescent center of the luminescent peak at 0.813 eV is mainly in the range of 50-100 nm,and the luminescent center of the luminescent peak at 0.928 eV is mainly in the range of 50-150 nm,accounting for 83.20%of the total number of luminescent centers.