Study On The Preparation Of SiC Thin Films On Graphite Substrates

Silicon Carbide(SiC) is a new type of wide band gap semiconductor material, Compared to the traditional semiconductor materials such as Si, Ge. SiC has excellent physical and chemical properties with wide band gap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity, high electron transfer rate, high thermal conductivity, low dielectric Constant, strong ability of anti-radiation, good chemical stability etc. Thus SiC has broad application prospects in high temperature, high frequency, anti-radiation and high power areas etc. In this paper, SiC thin films are deposited on graphite substrates at room temperature by RF magnetron sputtering then anneal in high temperature. The films were analyzed and tested by XRD, EDS, Ram etc. methods. The preparation technology of SiC thin film on the graphite substrate, with Si and C target is studied. The research Contents of this paper are as follows:The first chapter mainly introduces the structure, physical and chemical properties of SiC, its application in various fields as well as the research status at home and abroad.In the second chapter, the preparation method of SiC thin film is introduced, and the various methods are compared and summarized. Some common characterization methods of SiC thin films are summarized.In the third chapter, the principle of magnetron sputtering coating is introduced. And the working principle of the instrument of preparation and test is briefly introduced.The fourth chapter mainly discusses on SiC thin films preparation method that the graphite substrate was heated, and the effect on the formation of SiC thin film by sputtering C to introduce C buffer layer multilayer structure. The film composition and structure were analyzed by the XRD, EDS, Ram.The fifth chapter summarizes the work of this paper and the conclusion of the experiment, and the future development of SiC thin film is prospected.