Research On The Preparation Process Of Organic Field Effect Transistor Gas Sensor

Organic field-effect transistor gas sensor as in recent years, which has attracted great concern of the people of a new type of gas sensor, has small volume, simple preparation, high level of integration is the favour of people. Copper phthalocyanine(CuPc) organic semiconductor material has better thermal stability and good chemical stability,as well as better gas sensitive perit at the same time, so in the study of gas sensors. Based on the CuPc as organic semiconductor material, conducted on the preparation of organic semiconductor gas sensor technology and application of basic research. The paper is organized as follows:Refers to the preparation of CuPc organic film fork electrode structure field effect transistor gas sensor, and in detail describle the preparation procedure, and based on the CuPc thin films to 280 ?, 300 ? and 320 ? annealing treatment comparing performance difference between devices.The sacrificial layer technology preparation with air insulation structure has a field-effect transistor gas sensor, and ultimately determine the air insulation layer has a field-effect transistor process conditions of preparation of gas sensor.Uses the fork electrode structure and air insulation structure of a field-effect transistor on NO2 gas tested respectively, and two different structural components involved in results.