System Simulation Of Hybrid Integrated Chaotic Semiconductor Laser And Extraction Of Internal Parameters

In recent years,chaotic laser have become more and more widely used in optical fiber communication,chaotic radar and fault detection.In order to be more conducive to the practical application of chaotic laser,the domestic and foreign researchers have begun to research the integrated chaotic semiconductor lasers.At present,the integrated chaotic semiconductor lasers are mostly monolithic integrated,which not only reduces the volume of the chaotic laser generating device,but also ensures the stability of the device performance.However,the fabrication of monolithic integrated chaotic semiconductor lasers requires expensive instruments,and the growth process of chaotic laser chips needs to be strictly controlled.Therefore,the cost of monolithic integrated chaotic semiconductor lasers is higher.Based on this,we need to propose a low-cost and stable new integrated chaotic semiconductor laser structure.We propose a hybrid integrated chaotic semiconductor laser with short-cavity optical feedback.This is a new structure to achieve integration by simple manufacturing process and low cost,and it is more conducive to mass production of integrated chaotic semiconductor lasers.To make the simulation results more accurate,we extract the internal parameters of the chaotic semiconductor laser chips,and utilize them for numerical simulation.The route to chaos of this structure is systematically investigated.The chaotic semiconductor laser1 corresponds to period-doubling,and route of the chaotic semiconductor laser2 is different from the route of the chaotic semiconductor laser chip 1,it does not undergo any other high doubling period oscillations,such as the two-period oscillation.We use the maps of the largest Lyapunov exponent to estimate the dynamics of two chaotic semiconductor laser chips under different external-cavity lengths.We obtain the optimal production parameters of chaotic semiconductor laser chips,which provide theoretical guidance for the fabrication of hybrid integrated chaotic semiconductor laser.The results indicate that the optimal external cavity length and the feedback intensity(K_ap)of the chaotic semiconductor laser chip1 are 4mm and 0.12<K_ap<0.2;for the chaotic semiconductor laser chip2,optimal external cavity length and the feedback intensity are 5 mm and 0.07<K_ap<0.12,respectively.These results indicate that for the short-cavity structure,the optimal external cavity length and feedback intensity required for each chip to produce chaos are completely different.