Design And Dynamic Characteristics Of A Chaotic Integrate Semiconductor Laser Face To Butterfly Packaging

Optical chaos has received in-depth investigation in recent years owing to its important applications,such as chaos-based secure communications,fast physical random bit generation,chaotic radar,lidar,chaotic optical time domain reflectometer,distance measurement and optical fiber sensor.The integrated circuits have an advantage over those setups composed of discrete components for some unique virtues such as smaller size,lower cost,better stability,and better reproducibility via mass production.In order to combine the advantages of the the chaotic application and integrated circuits,the integration of chaotic semiconductor laser arises at the historic moment.This article design a chaotic integrate semiconductor lasers face to butterfly packaging and investigate the influences of power reflectivity,injection current and carrier lifetime on dynamics of the integrate semiconductor lasers face to butterfly packaging.Numerical simulation results are as follows:1.for the integrated semiconductor lasers face to butterfly packaging,diversely dynamical states including the stable state as well as the so-called period-one,multi-period,and chaotic states even can be observed through adjusting the power reflectivity or injection current.2.The relaxation oscillation frequency of the external-cavity semiconductor laser will get bigger via increasing injection current ratio or decreasing carrier lifetime,so it's more easy to generate chaotic signal with an effective bandwidth of 70 GHz.3.The influences of injection current and carrier lifetime on the relaxation oscillation frequency are analyzed and then the influences of the relaxation oscillation frequency on the spectral bandwidth are analyzed.Analysis results show that,the relaxation oscillation frequency and it's corresponding effective spectrum bandwidth will decrease in the same direction with the increase of carrier lifetime,namely the carrier lifetime is into approximately linear negative correlation with the relaxed oscillation frequency and the corresponding spectrum bandwidth.The relaxation oscillation frequency and it's corresponding effective spectrum bandwidth will increase in the same direction with the increase of injection current ratio,namely the injection current ratio is into approximately linear positive correlation with the relaxed oscillation frequency and the corresponding spectrum bandwidth.Effective spectrum bandwidth will increase in the same direction with the increase of the relaxed oscillation frequency,namely the relaxed oscillation frequency is into approximately linear positive correlation with the spectrum bandwidth.4.The influences of the feedback time delay on the external-cavity oscillation frequency are analyzed and then the influences of the external-cavity oscillation frequency on the spectral bandwidth are analyzed.Analysis results show that,spectrum bandwidth of semiconductor laser with millimeter level external cavity is extremely sensitive to the change of external cavity length,the deviation of 0.1millimeter will lead to the conversion between the chaotic state and other states.5.This paper use the relaxation oscillation of external-cavity semiconductor laser to cover time delay signature of feedback and analyze the influences of feedback time delay on the dynamics of oscillation frequency of the external-cavity.6.Semiconductor laser with millimeter level external cavity is extremely sensitive to the change of semiconductor laser rate equation parameters.This feature brings certain difficulty for the integration of our structure,but it also had higher practical value.According to this feature,this paper realize the transition from short to long cavity regime by adjusting the injection current and carrier lifetime to substantially increase the relaxation oscillation frequency at the same time,and then analyzes output stability of the chaotic semiconductor laser with millimeter external cavity in the mechanism of long cavity.