Study On The Properties Of Titanium Oxide Based Electronic Flexible Resistive Memory

With the rapid development of semiconductor industry and the continuous advancement of technology nodes,flash devices face severe challenges due to their physical limitations.Among all of the next generation of non-volatile memory,resistive random access memory?RRAM?is the most powerful contender due to its superior properties.In addition,there is a growing market demand for portable,flexible and foldable memory devices,and the research on flexible resistive-switching memory has become a hot topic.In this thesis,we study the influence of bending on the performances of Al/TiO_x/Al electronic resistive devices,and aim to develop a flexible resistive memory with higher flexibility.In this thesis,firstly,we discuss the influence of the compliance current(I_cc)and the thickness of TiO_x film.The optimal conditions of the Al/TiO_x/Al electronic device:I_cc is 10mA,the thickness of TiO_x is 70nm.Secondly,the experiments of different bending radius?12mm,8mm,4mm,2mm?and bending times?10,10²,10³,10⁴?were carried out in order to analyze the flexibility.We found that the performances of the device with 2mm radius or 10⁴bending times were still consistent with that of flat device,demonstrating the high flexibility of ATA electronic devices.Finally,the reasons for the high flexibility of ATA flexible devices are analyzed.By comparing the characterization analysis of bottom electrode and TiO_x film and the resistive switching mechanism of devices before and after 10⁴ bending cycles,we found that repeated bending doesn't change the surface morphology and chemical composition of the film,and no obvious cracks appear on the surface of the film.The repeated bending also doesn't alter their SCLC conduction mechanism and activation energy values.In this study,the flexible testing of electronic flexible resistive memory is carried out innovatively.It is proved that electronic resistive device has good advantages in flexible RRAM applications.And it will contribute to further development of higher flexibility RRAM device.